Abstract: A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.

Abstract: A semiconductor device comprises semiconductor substrate including vertical transistor and with dopants of a first type. Each transistor cell of transistor has body region formed in substrate and with dopants of second type. The body regions form first pn-junctions with substrate. A first well region is formed in substrate and with dopants of a second type forming a second pn-junction with substrate. Switch connects this first well region to body regions. A second well region is formed in the substrate and with dopants of a second type to form third pn-junction with substrate. Detection circuit is integrated in the second well region and to detect whether the first pn-junctions are reverse biased. The switch connects or disconnects the first well region(s) and the body regions of the transistor cell, and is opened, when the first pn-junctions are reverse biased, and closed, when the first pn-junctions are not reverse biased.

Abstract: A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.

Abstract: A semiconductor device comprises semiconductor substrate including vertical transistor and with dopants of a first type. Each transistor cell of transistor has body region formed in substrate and with dopants of second type. The body regions form first pn-junctions with substrate. A first well region is formed in substrate and with dopants of a second type forming a second pn-junction with substrate. Switch connects this first well region to body regions. A second well region is formed in the substrate and with dopants of a second type to form third pn-junction with substrate. Detection circuit is integrated in the second well region and to detect whether the first pn-junctions are reverse biased. The switch connects or disconnects the first well region(s) and the body regions of the transistor cell, and is opened, when the first pn-junctions are reverse biased, and dosed, when the first pn-junctions are not reverse biased.

Abstract: A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.

Abstract: A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.