Abstract: Controllable cleavage of a work piece is achieved through the use of capacitive clamps and application of a large tensile force. Capacitive clamps are used to secure the ends of a work piece with strong electrostatic forces. The capacitive clamps secure the ends of the work piece by creating electrostatic forces like those experienced by the plates in a parallel plate capacitor. After introduction of a crack along a side surface of the work piece, the application of a tensile force along the central axis of the work piece causes the crack to rapidly propagate and cleave the work piece into two or more pieces.

Abstract: Controllable cleavage of a work piece is achieved through the use of capacitive clamps and application of a large tensile force. Capacitive clamps are used to secure the ends of a work piece with strong electrostatic forces. The capacitive clamps secure the ends of the work piece by creating electrostatic forces like those experienced by the plates in a parallel plate capacitor. After introduction of a crack along a side surface of the work piece, the application of a tensile force along the central axis of the work piece causes the crack to rapidly propagate and cleave the work piece into two or more pieces.

Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Abstract: A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Abstract: An analog TV receiver implementation on DSP allows mobile platforms to view analog TV broadcasting on LCD displays. The analog television receiver includes a demodulator for demodulating a received analog television signal, an analog to digital converter for digitizing the demodulated television signal and a digital signal processor for producing display signals from the digitized television signals. The digital signal processor being programmed to search for a horizontal synchronization signal in the television signal, track the horizontal synchronization signal and search for a vertical synchronization signal in the television signal. Next the processor separates a luminance and a pair of chrominance components of the television signal and demodulates the pair of chrominance components. Red, green and blue values are constructed from the demodulated chrominance components and the luminance components. Display signals are produced from the red, green and blue values.

Abstract: An analog TV receiver implementation on DSP allows mobile platforms to view analog TV broadcasting on LCD displays. The analog television receiver includes a demodulator for demodulating a received analog television signal, an analog to digital converter for digitizing the demodulated television signal and a digital signal processor for producing display signals from the digitized television signals. The digital signal processor being programmed to search for a horizontal synchronization signal in the television signal, track the horizontal synchronization signal and search for a vertical synchronization signal in the television signal. Next the processor separates a luminance and a pair of chrominance components of the television signal and demodulates the pair of chrominance components. Red, green and blue values are constructed from the demodulated chrominance components and the luminance components. Display signals are produced from the red, green and blue values.