Abstract: A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

Abstract: A source module for use in a lithographic apparatus is constructed to generate extreme ultra violet (EUV) and secondary radiation, and includes a buffer gas configured to cooperate with a source of the EUV radiation. The buffer gas has at least 50% transmission for the EUV radiation and at least 70% absorption for the secondary radiation.

Abstract: A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.

Abstract: A radiation source (e.g., LPP—laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

Abstract: A source-collector device includes a target unit having a target surface of plasma-forming material and a laser unit to generate a beam of radiation directed onto the target surface to form a plasma from said plasma-forming material. A contaminant trap is provided to reduce propagation of particulate contaminants generated by the plasma. A radiation collector includes a one or more grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom, and a filter is configured to attenuate at least one wavelength range of the beam.

Abstract: A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber.

Abstract: A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.

Abstract: A radiation source (60) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle configured to direct a stream of fuel droplets (62) along a trajectory (64) towards a plasma formation location (66). The radiation source is configured to receive a first amount of radiation (68) such that the first amount of radiation is incident on a fuel droplet (62a) at the plasma formation location, and such that the first amount of radiation transfers energy into the fuel droplet to generate a modified fuel distribution (70), the modified fuel distribution having a surface.

Abstract: There is provided a multilayer mirror (80) comprising a layer of a first material (84) and a layer of silicon (82). The layer of the first material and the layer of silicon form a stack of layers. An exposed region of the layer of silicon comprises a modification that is arranged to improve the robustness of the exposed region of silicon.

Abstract: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

Abstract: Embodiments of the invention relate to a mirror (30). The mirror includes a mirroring surface and a profiled coating layer (32a) having an outer surface, wherein one or more wedged elements are formed by the outer surface with respect to the mirroring surface, and wherein the one or more wedged elements having a wedge angle (ø) in a range of approximately 10-200 mrad. The profiled coating layer may have a curved outer surface. The profiled coating layer may be formed from at least one of the following materials: Be, B, C, P, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Ru, Nb, Mo, Ba, La, Ce, Pr, Pa and U.

Abstract: A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.

Abstract: A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.

Abstract: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures configured to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. Each aperture has been manufactured by an anisotropic etching process.

Abstract: A method of generating radiation for a lithography apparatus. The method comprises providing a continuously renewing fuel target (50) at a plasma formation location (12) and directing a continuous-wave excitation beam (6) at the plasma formation location such that fuel within the continuously renewing fuel target is excited by the continuous-wave excitation beam to generate a radiation generating plasma.

Abstract: A radiation source for a lithographic apparatus uses a plurality of fiber lasers to ignite a fuel droplet at an ignition location to generate EUV radiation. The fiber lasers may be provided to emit parallel to an optical axis and a telescopic optical system is provided to focus the lasers at the ignition location, or the lasers may be directed towards the optical axis with a final focus lens being used to reduce beam waist. The lasers may be provided in two or more groups to allow them to be independently controlled and some of the lasers may be focused at a different location to provide a pre-pulse. Radiation from fiber lasers may also be combined using dichroic mirrors.

Abstract: A radiation source (e.g., LPP— laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.

Abstract: A multilayer mirror constructed to reflect radiation having a wavelength in the range of 6.4 nm to 7.2 nm. The multilayer mirror has alternating layers, including a first layer and a second layer. The first and second layers are selected from the group consisting of: U, or a compound or nitride thereof, and B4C layers; Th, or a compound or nitride thereof, and B4C layers; La, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B4C layers; U, or a compound or nitride thereof, and B9C layers; Th, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B layers; U, or a compound or nitride thereof, and B layers; C, or a compound or nitride thereof, and B layers; Th, or a compound or nitride thereof, and B layers.

Abstract: A radiation source for generating EUV radiation includes a laser configured to fire laser pulses at a target area to which is supplied a stream of fuel droplets, which may be tin droplets that emit EUV radiation when excited by the laser beam. The EUV radiation is collected by a collector. The tin droplets may be pre-conditioned by a laser pre-pulse before the main laser pulse to change the shape of the droplets so that the droplets are in an optimum condition for receiving the main laser pulse. Embodiments of the invention take into account the effect of the vaporization of one fuel droplet on succeeding droplets and allow the timing of the main and/or pre-pulse to be adjusted to take into account any delay in arrival of the subsequent droplet or oscillations in the shape of the subsequent droplet which may be caused by vaporization of the preceding droplet.