Abstract: Apparatuses for rapid-cycle high-temperature heating and cooling are disclosed. The apparatuses can be used for elementary, binary, tertiary, and quaternary alloys of wide and ultra-wide band gap compound semiconductors. The apparatuses can be used for wafer annealing, and can include an induction coil, and at least one gas nozzle. A susceptor holds a workpiece with a first face of the workpiece exposed and a second face of the workpiece in thermal contact with a first surface of the susceptor. The first gas nozzle is arranged to disperse cooling gas to the susceptor and workpiece assembly. Each heating operation uses inductive coupling to the susceptor to heat the workpiece from 800° C.-1100° C. to 1400° C.-2500° C. in about one second (for one example). Each cooling operation uses cooling gas dispersion to cool the workpiece from 1400° C.-2500° C. to 800° C.-1100° C. in about one second (for another cooling example).

Abstract: A fluid-directing device, which may be a CVD showerhead, includes a unitary body of additive metal construction, which may be made by 3D metal printing. The unitary body has a passage(s), fluid entrance(s), and fluid exit(s), arranged to direct fluid(s). The passage(s), fluid entrance(s) and fluid exit(s) include at least one cross-section shape not readily achieved through in-line drilling.

Abstract: A fluid-directing device, which may be a CVD showerhead, includes a unitary body of additive metal construction, which may be made by 3D metal printing. The unitary body has a passage(s), fluid entrance(s), and fluid exit(s), arranged to direct fluid(s). The passage(s), fluid entrance(s) and fluid exit(s) include at least one cross-section shape not readily achieved through in-line drilling.