Patents by Inventor Andrei Shibkov

Andrei Shibkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060190863
    Abstract: Disclosed is a method of modeling submicron MOSFETs for the purpose of circuit simulation. This invention is capable of accurately predicting performance of a MOSFET with complex geometry closely approximating the actual geometry of a device manufactured as part of an integrated circuit. Actual device geometry is predicted using physical simulation to account for process-related pattern distortion. The method constructs a sub-circuit representation of a MOSFET that is equivalent to a regular MOSFET compact model when ideal device geometry is assumed, while providing substantially better accuracy when process-related geometry distortion is considered. Models created using the disclosed method are compatible with existing circuit simulators. The method may be readily implemented using SPICE or other circuit simulators in a design flow.
    Type: Application
    Filed: February 6, 2006
    Publication date: August 24, 2006
    Inventors: Valery Axelrad, Andrei Shibkov
  • Patent number: 7047505
    Abstract: A method for selecting a process for forming a device, includes generating a plurality of equations using a response surface methodology model. Each equation relates a respective device simulator input parameter to a respective combination of processing parameters that can be used to form the device or a respective combination of device characteristics. A model of a figure-of-merit circuit is formed that is representative of an integrated circuit into which the device is to be incorporated. One of the combinations of processing parameters or combinations of device characteristics is identified that results in a device satisfying a set of performance specifications for the figure-of-merit circuit, using the plurality of equations and the device simulator.
    Type: Grant
    Filed: October 16, 2001
    Date of Patent: May 16, 2006
    Assignee: PDF Solutions, Inc.
    Inventors: Sharad Saxena, Andrei Shibkov, Patrick D. McNamara, Carlo Guardiani
  • Publication number: 20050114822
    Abstract: A method for performing self-consistent minimization of IC design and process interactions is disclosed. This method is based on calculating the amount of design-process interaction based on the information derived from circuit sensitivity analysis and process characterization. Optical proximity correction is subsequently performed in such a way that a) ensures that desired circuit performance is achieved in a given manufacturing environment if at all possible and b) also limits the increase in mask complexity to a realistic minimum.
    Type: Application
    Filed: March 2, 2004
    Publication date: May 26, 2005
    Inventors: Valery Axelrad, Andrei Shibkov, Victor Boksha
  • Publication number: 20040064296
    Abstract: A method for selecting a process for forming a device, includes generating a plurality of equations using a response surface methodology model. Each equation relates a respective device simulator input parameter to a respective combination of processing parameters that can be used to form the device or a respective combination of device characteristics. A model of a figure-of-merit circuit is formed that is representative of an integrated circuit into which the device is to be incorporated. One of the combinations of processing parameters or combinations of device characteristics is identified that results in a device satisfying a set of performance specifications for the figure-of-merit circuit, using the plurality of equations and the device simulator.
    Type: Application
    Filed: October 14, 2003
    Publication date: April 1, 2004
    Inventors: Sharad Saxena, Andrei Shibkov, Patrick D. McNamara, Carlo Guardiani