Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.

Abstract: A material with nanopillar structures extending from a substrate. The nanopillars are engageable by organisms to cause an interaction, such as cellular destruction.

Abstract: A material with nanopillar structures extending from a substrate. The nanopillars are engageable by organisms to cause an interaction, such as cellular destruction.

Abstract: A material with nanopillar structures extending from a substrate. The nanopillars are engageable by organisms to cause an interaction, such as cellular destruction.

Abstract: Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO2/Cr2O3/CrO2 sequence but typically have multiple CrO2/Cr2O3/CrO2 sequences in series.