Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Abstract: To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material.

Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Abstract: A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.

Abstract: A method of encapsulating PbS quantum dots is provided that includes depositing, using atomic layer deposition (ALD), a first layer of TiO2 on a substrate, depositing, using ALD, a first layer of PbS quantum dots on the first layer of TiO2, and depositing, using ALD, an encapsulating layer of the TiO2 on the first layer of TiO2 and the first layer of PbS quantum dots, where the first layer of PbS quantum dots are encapsulated and separated by the first layer of TiO2 and the encapsulating layer of TiO2.

Abstract: A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.

Abstract: To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material.