Patents by Inventor Andrei Vescan
Andrei Vescan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7994540Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: July 24, 2009Date of Patent: August 9, 2011Assignee: International Rectifier CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Publication number: 20100019850Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: July 24, 2009Publication date: January 28, 2010Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, JR., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7569871Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: March 31, 2008Date of Patent: August 4, 2009Assignee: Nitronex CorporationInventors: Walter H. Nagy, Jerry Wayne Johnson, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Kevin J. Linthicum
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Publication number: 20080246058Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: March 31, 2008Publication date: October 9, 2008Applicant: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Patent number: 7352016Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: November 13, 2006Date of Patent: April 1, 2008Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Allen W. Hanson, Jerry Wayne Johnson, Kevin J. Linthicum, Edwin Lanier Piner, Pradeep Rajagopal, John Claassen Roberts, Sameer Singhal, Robert Joseph Therrien, Andrei Vescan
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Publication number: 20070120147Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: November 13, 2006Publication date: May 31, 2007Applicant: Nitronex CorporationInventors: Walter Nagy, Ricardo Borges, Jeffrey Brown, Apurva Chaudhari, James Cook, Allen Hanson, Jerry Johnson, Kevin Linthicum, Edwin Piner, Pradeep Rajagopal, John Roberts, Sameer Singhal, Robert Therrien, Andrei Vescan
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Patent number: 7135720Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: GrantFiled: August 5, 2004Date of Patent: November 14, 2006Assignee: Nitronex CorporationInventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
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Publication number: 20060249750Abstract: Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.Type: ApplicationFiled: June 29, 2006Publication date: November 9, 2006Applicant: Nitronex CorporationInventors: Jerry Johnson, Robert Therrien, Andrei Vescan, Jeffrey Brown
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Patent number: 7071498Abstract: Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.Type: GrantFiled: December 17, 2003Date of Patent: July 4, 2006Assignee: Nitronex CorporationInventors: Jerry W. Johnson, Robert J. Therrien, Andrei Vescan, Jeffrey D. Brown
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Publication number: 20050167775Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.Type: ApplicationFiled: August 5, 2004Publication date: August 4, 2005Applicant: Nitronex CorporationInventors: Walter Nagy, Ricardo Borges, Jeffrey Brown, Apurva Chaudhari, James Cook, Allen Hanson, Jerry Johnson, Kevin Linthicum, Edwin Piner, Pradeep Rajagopal, John Roberts, Sameer Singhal, Robert Therrien, Andrei Vescan
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Publication number: 20050145851Abstract: Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.Type: ApplicationFiled: June 28, 2004Publication date: July 7, 2005Applicant: Nitronex CorporationInventors: Jerry Johnson, Ricardo Borges, Jeffrey Brown, James Cook, Allen Hanson, Edwin Piner, Pradeep Rajagopal, John Roberts, Sameer Singhal, Robert Therrien, Andrei Vescan
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Publication number: 20050133818Abstract: Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.Type: ApplicationFiled: December 17, 2003Publication date: June 23, 2005Inventors: Jerry Johnson, Robert Therrien, Andrei Vescan, Jeffrey Brown