Abstract: A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool.

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to facilitate the process performed by the semiconductor processing tool.

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

Abstract: An apparatus for processing semiconductors includes a processing chamber including a plurality of chamber walls, a substrate holder, positioned within the processing chamber and configured to support the substrate, and a linear displacement device, coupled between a base wall of the plurality of walls and the substrate holder and configured to move the substrate holder relative to the base wall. A shielding part extending from the substrate holder to be in close parallel relation with at least one of the plurality of walls such that a first area of the processing chamber is substantially shielded from a processing environment to which the substrate is exposed.

Abstract: A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract: An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspect ratio of length to diameter sufficient to impede a processing plasma from traveling through the full length of the cell. A coupling device configured to couple the honeycomb core structure to the backing plate such that the honeycomb structure is aligned with at least a portion of the through hole in the backing plate. The optical window deposition shield shields the optical viewing window of a plasma processing apparatus from contact with the plasma.

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract: A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer temperature based upon impedance measurements determined by RF sensors located in the electrostatic chuck RF feed line. The method and system further include utilizing the clamping status of the wafer on the electrostatic chuck to monitor impedance during the plasma process.

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, ?i, ?i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, ?i is the on-time of the RF power for the ith RF feed line, ?i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.

Abstract: A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.

Abstract: A microwave window for transmitting microwave radiation includes a solid body and a flange. The solid body includes a first surface and a second surface spaced apart from each other in a first direction thereby defining a thickness of the solid body in the first direction. The flange is disposed at a periphery of the solid body such that a peripheral portion of the solid body extends a length into the flange in a second direction perpendicular to the first direction. The thickness and the length are selected such that the power of reflections of microwave radiation by the microwave window are no more than about ten times the power of reflections at the minimum value.

Abstract: An electrode assembly (50) and an associated plasma reactor system (10) and related methods for a variety of plasma processing applications. The electrode assembly provides control of a plasma density profile (202) within an interior region (30) of a plasma reactor chamber (20). The electrode assembly includes an upper electrode (54) having a lower surface (54L), an upper surface (54U) and an outer edge (54E). The lower surface of the upper electrode faces interior region of the plasma chamber housing the plasma (200), and thus interfaces with the plasma. The electrode assembly further includes a segmented electrode (60) arranged proximate to and preferably substantially parallel with the upper surface of the upper electrode. The segmented electrode comprises two or more separated electrode segments (62a, 62b, . . . 62n), each having an upper and lower surface. Each electrode segment is spaced apart from the upper electrode upper surface by a corresponding controlled gap (Ga, Gb, . . . Gn).

Abstract: A multi-point detection method and system for analyzing a composition within an examination area. The system simultaneously acquires multi-dimensional distributions (e.g., two- or three-dimensional distributions) of plasma optical emissions at at least two wavelengths. Such diagnostics are useful for real-time spatially-resolved measurements of plasma electron temperature distributions and/or chemical species concentrations within a plasma processing chamber (50). Generally, the system analyzes/diagnoses the measurement of line-of-sight light emission or absorption in the plasma.

Abstract: A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

Abstract: A closed-drift Hall effect plasma vacuum pump includes one or more pumping conduits which are linked with a radial magnetic field. The magnetic field separates a plasma from a plasma at a higher pressure which is formed by cross-field plasma transport from a plasma processing region.

Abstract: A method, system and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.

Abstract: An electrode assembly (50) and an associated plasma reactor system (10) and related methods for a variety of plasma processing applications. The electrode assembly provides control of a plasma density profile (202) within an interior region (30) of a plasma reactor chamber (20). The electrode assembly includes an upper electrode (54) having a lower surface (54L), an upper surface (54U) and an outer edge (54E). The lower surface of the upper electrode faces interior region of the plasma chamber housing the plasma (200), and thus interfaces with the plasma. The electrode assembly further includes a segmented electrode (60) arranged proximate to and preferably substantially parallel with the upper surface of the upper electrode. The segmented electrode comprises two or more separated electrode segments (62a, 62b, . . . 62n), each having an upper and lower surface. Each electrode segment is spaced apart from the upper electrode upper surface by a corresponding controlled gap (Ga, Gb, . . . Gn).

Abstract: A plasma pump, a plasma processing system and method to pump particles from a first region containing a plasma to a second region at a higher pressure is provided. The plasma pump and the plasma processing system each include a magnetic field producing member disposed within a passageway defined by an inner wall and an outer wall. The magnetic field producing member produces an alternating magnetic field that extends generally transverse to the passageway. An electric field producing member is disposed outside of the passageway and produces an electric field in a direction generally transverse to the passageway and generally transverse to the magnetic field. In one preferred embodiment, the passageway extends vertically and in another preferred embodiment, the passageway extends horizontally.