Patents by Inventor Andres A. Bryant

Andres A. Bryant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dynamic threshold voltage devices with low gate to substrate resistance
    Patent number: 6459106
    Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.
    Type: Grant
    Filed: January 3, 2001
    Date of Patent: October 1, 2002
    Assignee: International Business Machines Corporation
    Inventors: Andres A. Bryant, Edward Joseph Nowak, Minh Ho Tong
  • Dynamic threshold voltage devices with low gate to substrate resistance
    Patent number: 6429056
    Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: August 6, 2002
    Assignee: International Business Machines Corporation
    Inventors: Andres A. Bryant, Edward Joseph Nowak, Minh Ho Tong
  • Dynamic threshold voltage devices with low gate to substrate resistance
    Publication number: 20010001483
    Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.
    Type: Application
    Filed: January 3, 2001
    Publication date: May 24, 2001
    Inventors: Andres A. Bryant, Edward Joseph Nowak, Minh Ho Tong