Patents by Inventor Andrew Alexander McKnight

Andrew Alexander McKnight has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device defect type determination method and structure
    Patent number: 7781239
    Abstract: A semiconductor defect type determination method and structure. The method includes providing a semiconductor wafer comprising a first field effect transistor (FET) comprising a first type of structure and a second FET comprising a second different type of structure. A first procedure is performed to determine if a first current flow exists between a first conductive layer formed on the first FET and a second conductive layer formed on the first FET. A second procedure is performed to determine if a second current flow exists between a third conductive layer formed the second FET and a fourth conductive layer formed on the second FET. A determination is made from combining results of the first procedure and results of the second procedure that the first FET and the second FET each comprise a specified type of defect.
    Type: Grant
    Filed: January 10, 2008
    Date of Patent: August 24, 2010
    Assignee: International Business Machines Corporation
    Inventors: Ishtiaq Ahsan, Andrew Alexander McKnight, Katsunori Onishi, Keith Howard Tabakman
  • SEMICONDUCTOR DEVICE DEFECT TYPE DETERMINATION METHOD AND STRUCTURE
    Publication number: 20090179661
    Abstract: A semiconductor defect type determination method and structure. The method includes providing a semiconductor wafer comprising a first field effect transistor (FET) comprising a first type of structure and a second FET comprising a second different type of structure. A first procedure is performed to determine if a first current flow exists between a first conductive layer formed on the first FET and a second conductive layer formed on the first FET. A second procedure is performed to determine if a second current flow exists between a third conductive layer formed the second FET and a fourth conductive layer formed on the second FET. A determination is made from combining results of the first procedure and results of the second procedure that the first FET and the second FET each comprise a specified type of defect.
    Type: Application
    Filed: January 10, 2008
    Publication date: July 16, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ishtiaq Ahsan, Andrew Alexander McKnight, Katsunori Onishi, Keith Howard Tabakman