Abstract: Embodiments of the present application provide a measuring apparatus and method of a wafer geometry. The measuring apparatus of the wafer geometry includes: an air-bearing chuck, configured to generate an air cushion to keep a wafer to be measured floating up on a top surface of the air-bearing chuck; and an interferometer, disposed on one side, away from the air-bearing chuck, of the wafer, and configured to obtain an interference fringe image of a front surface of the wafer to measure a geometry of the wafer based on the interference fringe image. An air cushion is generated by utilizing an air-bearing chuck to keep a wafer to be measured floating up on a top surface of the air-bearing chuck, thereby avoiding damage of the original shape of the wafer or contamination of the wafer by a clamping tool, and further reducing errors during measurement.

Abstract: Embodiments of the present application provide a measuring apparatus and method of a wafer geometry. The measuring apparatus of the wafer geometry includes: an air-bearing chuck, configured to generate an air cushion to keep a wafer to be measured floating up on a top surface of the air-bearing chuck; and an interferometer, disposed on one side, away from the air-bearing chuck, of the wafer, and configured to obtain an interference fringe image of a front surface of the wafer to measure a geometry of the wafer based on the interference fringe image. An air cushion is generated by utilizing an air-bearing chuck to keep a wafer to be measured floating up on a top surface of the air-bearing chuck, thereby avoiding damage of the original shape of the wafer or contamination of the wafer by a clamping tool, and further reducing errors during measurement.

Abstract: An air-bearing chuck includes a nozzle portion and a gas channel portion. The nozzle portion is provided with a plurality of support force nozzles for generating an air cushion on a top surface of the nozzle portion. The gas channel portion includes a first gas channel configured to transmit a first gas to the plurality of support force nozzles to provide support force. Embodiments of the present application can implement that the first gas channel transmits the first gas to the plurality of support force nozzles to provide support force, and an air cushion is generated on the top surface of the nozzle portion by regulating gas flow of the first gas in the first gas channel, thereby keeping a supported object supported by the air cushion stably floating up on one side, away from the top surface of the nozzle portion, of the air cushion.

Abstract: A semiconductor equipment architecture WGT for wafer shape and flatness measurement is disclosed. The semiconductor equipment architecture WGT includes a reflective air-bearing chuck and a hybrid wafer thickness gauge. Also disclosed are the corresponding methods of measuring wafer shape and flatness using the architecture, the air-bearing chuck and the hybrid wafer thickness gauge.

Abstract: A semiconductor equipment architecture WGT for wafer shape and flatness measurement is disclosed. The semiconductor equipment architecture WGT includes a reflective air-bearing chuck and a hybrid wafer thickness gauge. Also disclosed are the corresponding methods of measuring wafer shape and flatness using the architecture, the air-bearing chuck and the hybrid wafer thickness gauge.

Abstract: A semiconductor equipment architecture WGT for wafer shape and flatness measurement is disclosed. The semiconductor equipment architecture WGT includes a reflective air-bearing chuck and a hybrid wafer thickness gauge. Also disclosed are the corresponding methods of measuring wafer shape and flatness using the architecture, the air-bearing chuck and the hybrid wafer thickness gauge.

Abstract: An inspection system may include a controller coupled to a differential interference contrast imaging tool for generating images of a sample based on illumination with two sheared illumination beams. The controller may determine a first defect-induced phase shift based on a first set of images of a defect on the sample with a first selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, determine a second defect-induced phase shift based a second set of images of the defect with a second selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, and classify the defect as a metal or a non-metal based on a comparison of the first phase shift to the second phase shift.

Abstract: The inspection system includes an illumination source, a TDI-CCD sensor, and a dark field/bright field sensor. A polarizer receives the light from the light source. The light from the polarizer is directed at a Wollaston prism, such as through a half wave plate. Use of the TDI-CCD sensor and the dark field/bright field sensor provide high spatial resolution, high defect detection sensitivity and signal-to-noise ratio, and fast inspection speed.

Abstract: The inspection system includes an illumination source, a TDI-CCD sensor, and a dark field/bright field sensor. A polarizer receives the light from the light source. The light from the polarizer is directed at a Wollaston prism, such as through a half wave plate. Use of the TDI-CCD sensor and the dark field/bright field sensor provide high spatial resolution, high defect detection sensitivity and signal-to-noise ratio, and fast inspection speed.

Abstract: An inspection system may include a controller coupled to a differential interference contrast imaging tool for generating images of a sample based on illumination with two sheared illumination beams. The controller may determine a first defect-induced phase shift based on a first set of images of a defect on the sample with a first selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, determine a second defect-induced phase shift based a second set of images of the defect with a second selected illumination spectrum and two or more selected induced phase differences between the two sheared illumination beams, and classify the defect as a metal or a non-metal based on a comparison of the first phase shift to the second phase shift.

Abstract: A system includes one or more wafer geometry measurement tools configured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement tools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer.

Abstract: The system includes a dual interferometer sub-system configured to measure flatness across a substrate. The system includes a mass sensor configured to measure the mass of the substrate. The system includes a controller communicatively coupled to the dual interferometer sub-system and the mass sensor. The controller includes one or more processors. The one or more processors are configured to execute a set of program instructions stored in memory, the set of program instructions configured to cause the one or more processors to determine a thickness distribution of at least one of the substrate or a film deposited on the substrate as a function of position across the substrate based on one or more flatness measurements from the dual interferometer sub-system and one or more mass measurements from the mass sensor.

Abstract: The system includes a dual interferometer sub-system configured to measure flatness across a substrate. The system includes a mass sensor configured to measure the mass of the substrate. The system includes a controller communicatively coupled to the dual interferometer sub-system and the mass sensor. The controller includes one or more processors. The one or more processor are configured to execute a set of program instructions stored in memory, the set of program instructions configured to cause the one or more processors to determine a thickness distribution of at least one of the substrate or a film deposited on the substrate as a function of position across the substrate based on one or more flatness measurements from the dual interferometer sub-system and one or more mass measurements from the mass sensor.

Abstract: A system includes one or more wafer geometry measurement tools configured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement tools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer.

Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.

Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.

Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.

Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.

Abstract: Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.

Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a first distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the first distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.