Abstract: The present invention is directed to III-V semiconductor trench MOSFETs comprising a buried field shield. The invention is further directed to an etch and regrowth method for forming this buried field shield. For example, in III-V trench MOSFETs with an n-type substrate, the region can be formed by an etch into the drift (n-type) and regrowth of p-type semiconductor to form the buried field shield in the trench area and a body/channel outside the trench area. With a narrow trench feature size, the regrowth will planarize enabling subsequent source epitaxy (n-type) without requiring ex-situ processing between body/channel and source growths, eliminating the need for additional masking of the regrowth.

Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.

Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.