Abstract: The present disclosure relates, in part, to an apparatus for controlling the concentration of a component within a gas mixture. In particular embodiments, the component is a vaporized liquid component, such as a vaporized stabilizer or a vaporized precursor. Also described are systems thereof and methods for such control.

Abstract: A cooling assembly includes a first subassembly and a second subassembly. The first subassembly is coupled to a showerhead of a substrate processing system. The first subassembly including a plurality of passages proximate to and in thermal communication with the showerhead. The second subassembly is removably coupled to the first subassembly. The second subassembly includes a plurality of protrusions that align with the plurality of passages, respectively.

Abstract: A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

Abstract: A spindle assembly for transferring wafers in a multi-station process module is provided, including: a hub body, the hub body configured to be rotated about a center axis; a plurality of end effectors, each end effector having a first end configured for connection to the hub body and a second end configured to support a wafer; a plurality of covers; a plurality of fastener assemblies; wherein the first end of each end effector is clamped between a respective cover and a respective outer portion of the hub body by a respective fastener assembly, the respective fastener assembly including a wave spring that provides a consistent clamping force.

Abstract: A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

Abstract: A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.