Patents by Inventor Andrew C. Perry
Andrew C. Perry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8123107Abstract: The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.Type: GrantFiled: May 25, 2004Date of Patent: February 28, 2012Assignee: Praxair S.T. Technology, Inc.Inventors: Holger J. Koenigsmann, Andrew C. Perry, Thomas J. Hunt, Paul S. Gilman
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Patent number: 8025749Abstract: The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 ?m for improving sputter uniformity and reducing sputter target arcing.Type: GrantFiled: December 23, 2004Date of Patent: September 27, 2011Assignee: Praxair S. T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman
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Patent number: 7740723Abstract: A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 ?m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver an gold sputter targets.Type: GrantFiled: May 17, 2007Date of Patent: June 22, 2010Assignee: Praxair S.T. Technology, IncInventors: Andrew C. Perry, Paul S. Gilman, Wendell Stuber, Binu Mathew
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Patent number: 7608172Abstract: The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least ?50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.Type: GrantFiled: August 11, 2003Date of Patent: October 27, 2009Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Holger J. Koenigsmann, David E. Dombrowski, Thomas J. Hunt
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Patent number: 7320736Abstract: The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 ?m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than ?50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.Type: GrantFiled: October 19, 2004Date of Patent: January 22, 2008Assignee: Praxair Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman, Thomas J. Hunt
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Patent number: 7235143Abstract: A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 ?m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver and gold sputter targets.Type: GrantFiled: August 8, 2002Date of Patent: June 26, 2007Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman, Wendell Stuber, Binu Mathew
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Patent number: 6942763Abstract: An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is disclosed. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 ?m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than ?50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.Type: GrantFiled: April 11, 2003Date of Patent: September 13, 2005Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman, Jaak Van den Sype
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Patent number: 6896748Abstract: The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 ?m for improving sputter uniformity and reducing sputter target arcing.Type: GrantFiled: July 18, 2002Date of Patent: May 24, 2005Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman
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Patent number: 6835251Abstract: The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 &mgr;m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.Type: GrantFiled: August 16, 2002Date of Patent: December 28, 2004Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman, Thomas J. Hunt
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Patent number: 6708870Abstract: The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate. A filler metal secures the outer perimeter of the insert to the backing plate in order to eliminate leakage from the cooling channel during sputtering of the sputter target.Type: GrantFiled: May 24, 2002Date of Patent: March 23, 2004Assignee: Praxair S.T. Technology, Inc.Inventors: Holger J. Koenigsmann, Andrew C. Perry, Thomas J. Hunt, Paul S. Gilman
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Publication number: 20040031546Abstract: The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least −50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.Type: ApplicationFiled: August 11, 2003Publication date: February 19, 2004Inventors: Andrew C. Perry, Holger J. Koenigsmann, David E. Dombrowski, Thomas J. Hunt
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Publication number: 20040025986Abstract: A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 &mgr;m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver and gold sputter targets.Type: ApplicationFiled: August 8, 2002Publication date: February 12, 2004Inventors: Andrew C. Perry, Paul S. Gilman, Wendell Stuber, Binu Mathew
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Publication number: 20040011440Abstract: The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 &mgr;m for improving sputter uniformity and reducing sputter target arcing.Type: ApplicationFiled: July 18, 2002Publication date: January 22, 2004Inventors: Andrew C. Perry, Paul S. Gilman
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Publication number: 20030218054Abstract: The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate. A filler metal secures the outer perimeter of the insert to the backing plate in order to eliminate leakage from the cooling channel during sputtering of the sputter target.Type: ApplicationFiled: May 24, 2002Publication date: November 27, 2003Inventors: Holger J. Koenigsmann, Andrew C. Perry, Thomas J. Hunt, Paul S. Gilman
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Patent number: 6652668Abstract: The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least −50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.Type: GrantFiled: May 31, 2002Date of Patent: November 25, 2003Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Holger J. Koenigsmann, David E. Dombrowski, Thomas J. Hunt
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Publication number: 20030205463Abstract: An aluminum alloy sputter target having a sputter target face for sputtering the sputter target. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 &mgr;m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than −50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.Type: ApplicationFiled: April 11, 2003Publication date: November 6, 2003Inventors: Andrew C. Perry, Paul S. Gilman, Jaak Van den Sype
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Patent number: 6605199Abstract: An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is provided. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 &mgr;m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than −50° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.Type: GrantFiled: November 14, 2001Date of Patent: August 12, 2003Assignee: Praxair S.T. Technology, Inc.Inventors: Andrew C. Perry, Paul S. Gilman, Jaak Van den Sype
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Publication number: 20030098103Abstract: The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 &mgr;m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.Type: ApplicationFiled: August 16, 2002Publication date: May 29, 2003Inventors: Andrew C. Perry, Paul S. Gilman, Thomas J. Hunt
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Publication number: 20030098102Abstract: The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 125 &mgr;m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.Type: ApplicationFiled: November 13, 2001Publication date: May 29, 2003Inventors: Andrew C. Perry, Paul S. Gilman, Thomas J. Hunt
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Publication number: 20030089430Abstract: An aluminum alloy sputter target having a sputter target face for sputtering the sputter target. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 &mgr;m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than −50 ° C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.Type: ApplicationFiled: November 14, 2001Publication date: May 15, 2003Inventors: Andrew C. Perry, Paul S. Gilman, Jaak Van den Sype