Abstract: Disclosed is a process for manufacturing individual die devices, with a desired or predicted amount of flatness, from a bonded wafer process. The flatness of a bonded wafer is measured at point in the wafer manufacturing process. This measurement is compared to a value predetermined by an empirical analysis of previous devices made by the same process. If the flatness of the bonded wafer is not at the predetermined value, then one or more compensation layers are provided to the bonded wafer to obtain the predetermined flatness value. Once obtained, subsequent processing is performed and the resulting individual dies are obtained with the desired flatness characteristic.

Abstract: A pump assembly for increasing urine output from a patient includes at least one ureteral catheter including: a distal portion having a retention portion configured to be positioned in a patient's kidney, renal pelvis, and/or ureter; and a proximal portion defining a drainage lumen. The retention portion includes at least one drainage port which permits fluid flow into the drainage lumen. The pump assembly further includes a pump configured to provide negative pressure to at least one of the renal pelvis or kidney through the drainage lumen of the at least one ureteral catheter. The pump includes at least one fluid port in fluid communication with the drainage lumen of the proximal portion of the ureteral catheter for receiving fluid from the patient's kidney, wherein at least a portion of the pump is configured to be positioned within a patient's body.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: Disclosed is a process for manufacturing individual die devices, with a desired or predicted amount of flatness, from a bonded wafer process. The flatness of a bonded wafer is measured at point in the wafer manufacturing process. This measurement is compared to a value predetermined by an empirical analysis of previous devices made by the same process. If the flatness of the bonded wafer is not at the predetermined value, then one or more compensation layers are provided to the bonded wafer to obtain the predetermined flatness value. Once obtained, subsequent processing is performed and the resulting individual dies are obtained with the desired flatness characteristic.

Abstract: Methods and apparatus for enhancing the flatness of a die by applying adhesive to a shim having a selected flatness, rotating the shim to spread the adhesive to a layer having a uniform thickness, evacuating a chamber to create a vacuum; manipulating a die onto the adhesive layer in the chamber; and reducing a level of the vacuum to pressure the die onto the adhesive layer such that the bow in the die is reduced as the die conforms to the shim.

Abstract: Methods and apparatus for enhancing the flatness of a die by applying adhesive to a shim having a selected flatness, rotating the shim to spread the adhesive to a layer having a uniform thickness, evacuating a chamber to create a vacuum; manipulating a die onto the adhesive layer in the chamber; and reducing a level of the vacuum to pressure the die onto the adhesive layer such that the bow in the die is reduced as the die conforms to the shim.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: A semiconductor system for registration of spectra, color signals, color images and the like is comprised of a CCD or CMOS chip having a multiplicity of light sensitivity pixels with individual controllable Fabry-Pérot interferometer color filters ahead of each pixel in the light path.