Patents by Inventor Andrew Christopher Graeme Wood
Andrew Christopher Graeme Wood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11695069Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.Type: GrantFiled: May 10, 2021Date of Patent: July 4, 2023Assignee: Infineon Technologies AGInventors: Markus Zundel, Stefan Mieslinger, Thomas Ostermann, Andrew Christopher Graeme Wood
-
Patent number: 11127853Abstract: A transistor device is disclosed. The transistor device includes: a semiconductor body; a source conductor on top of the semiconductor body; a source clip on top of the source conductor and electrically connected to the source conductor; a first active device region arranged in the semiconductor body, covered by the source conductor and the source clip, and including at least one device cell; and a second active device region arranged in the semiconductor body, covered by regions of the source conductor that are not covered by the source clip, and including at least one device cell. The first active device region has a first area specific on-resistance and the second active device region has a second area specific on-resistance, the second area specific on-resistance being greater than the first area specific on-resistance.Type: GrantFiled: June 6, 2019Date of Patent: September 21, 2021Assignee: Infineon Technologies AGInventors: Cristian Mihai Boianceanu, Liu Chen, Sebastian Sosin, Andrew Christopher Graeme Wood
-
Publication number: 20210265497Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.Type: ApplicationFiled: May 10, 2021Publication date: August 26, 2021Inventors: Markus Zundel, Stefan Mieslinger, Thomas Ostermann, Andrew Christopher Graeme Wood
-
Patent number: 11018250Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.Type: GrantFiled: May 6, 2019Date of Patent: May 25, 2021Assignee: Infineon Technologies AGInventors: Markus Zundel, Stefan Mieslinger, Thomas Ostermann, Andrew Christopher Graeme Wood
-
Publication number: 20200357917Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.Type: ApplicationFiled: May 6, 2019Publication date: November 12, 2020Inventors: Markus Zundel, Stefan Mieslinger, Thomas Ostermann, Andrew Christopher Graeme Wood
-
Patent number: 10593799Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.Type: GrantFiled: August 10, 2018Date of Patent: March 17, 2020Assignee: Infineon Technologies AGInventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Andrew Christopher Graeme Wood
-
Patent number: 10580656Abstract: A semiconductor wafer having a main surface is provided. A first etch resistant mask is provided on the main surface. A first reactive ion etching step that forms a first group of trenches using the first etch resistant mask is performed. Each of the trenches in the first group is covered with a second etch resistant mask after performing the first reactive ion etching step. A second reactive ion etching step that forms a second group of trenches using one or both of the first etch resistant mask and the second etch resistant mask is performed. The trenches in the second group are laterally offset from the trenches in the first group. The first and second reactive ion etching processes are performed such that a depth of the trenches of the first group is substantially equal to a depth of the trenches in the second group.Type: GrantFiled: July 6, 2018Date of Patent: March 3, 2020Assignee: Infineon Technologies AGInventors: Marija Borna Tutuc, Daniel Tutuc, Andrew Christopher Graeme Wood
-
Patent number: 10535576Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: GrantFiled: September 12, 2017Date of Patent: January 14, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Publication number: 20200013631Abstract: A semiconductor wafer having a main surface is provided. A first etch resistant mask is provided on the main surface. A first reactive ion etching step that forms a first group of trenches using the first etch resistant mask is performed. Each of the trenches in the first group is covered with a second etch resistant mask after performing the first reactive ion etching step. A second reactive ion etching step that forms a second group of trenches using one or both of the first etch resistant mask and the second etch resistant mask is performed. The trenches in the second group are laterally offset from the trenches in the first group. The first and second reactive ion etching processes are performed such that a depth of the trenches of the first group is substantially equal to a depth of the trenches in the second group.Type: ApplicationFiled: July 6, 2018Publication date: January 9, 2020Inventors: Marija Borna Tutuc, Daniel Tutuc, Andrew Christopher Graeme Wood
-
Publication number: 20190386133Abstract: A transistor device is disclosed. The transistor device includes: a semiconductor body; a source conductor on top of the semiconductor body; a source clip on top of the source conductor and electrically connected to the source conductor; a first active device region arranged in the semiconductor body, covered by the source conductor and the source clip, and including at least one device cell; and a second active device region arranged in the semiconductor body, covered by regions of the source conductor that are not covered by the source clip, and including at least one device cell. The first active device region has a first area specific on-resistance and the second active device region has a second area specific on-resistance, the second area specific on-resistance being greater than the first area specific on-resistance.Type: ApplicationFiled: June 6, 2019Publication date: December 19, 2019Inventors: Cristian Mihai Boianceanu, Liu Chen, Sebastian Sosin, Andrew Christopher Graeme Wood
-
Publication number: 20190334000Abstract: A transistor component includes at least one transistor cell having: a drift region, a source region, a body region and a drain region in a semiconductor body, the body region being arranged between the source and drift regions, and the drift region being arranged between the body and drain regions; a gate electrode arranged adjacent to the body region and dielectrically isolated from the body region by a gate dielectric; and a field electrode arranged adjacent to the drift region and dielectrically isolated from the drift region by a field electrode dielectric. The field electrode dielectric has a thickness that increases in a direction toward the drain region. The drift region has, in a mesa region adjacent to the field electrode, a doping concentration that increases in the direction toward the drain region.Type: ApplicationFiled: April 24, 2019Publication date: October 31, 2019Inventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Franz Hirler, Andrew Christopher Graeme Wood
-
Patent number: 10453915Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.Type: GrantFiled: March 30, 2018Date of Patent: October 22, 2019Assignee: Infineon Technologies AGInventors: Andreas Meiser, Karl-Heinz Bach, Christian Kampen, Dietmar Kotz, Andrew Christopher Graeme Wood, Markus Zundel
-
Publication number: 20190051749Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.Type: ApplicationFiled: August 10, 2018Publication date: February 14, 2019Inventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Andrew Christopher Graeme Wood
-
Publication number: 20180286944Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.Type: ApplicationFiled: March 30, 2018Publication date: October 4, 2018Inventors: Andreas Meiser, Karl-Heinz Bach, Christian Kampen, Dietmar Kotz, Andrew Christopher Graeme Wood, Markus Zundel
-
Patent number: 10090215Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.Type: GrantFiled: January 11, 2017Date of Patent: October 2, 2018Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher
-
Patent number: 9917160Abstract: A semiconductor device includes a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.Type: GrantFiled: April 14, 2016Date of Patent: March 13, 2018Assignee: Infineon Technologies AGInventors: Andrew Christopher Graeme Wood, Oliver Blank, Martin Poelzl, Martin Vielemeyer
-
Publication number: 20180012819Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: ApplicationFiled: September 12, 2017Publication date: January 11, 2018Inventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Patent number: 9847387Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.Type: GrantFiled: May 31, 2016Date of Patent: December 19, 2017Assignee: Infineon Technologies AGInventors: Markus Zundel, Karl-Heinz Bach, Andrew Christopher Graeme Wood
-
Patent number: 9799583Abstract: In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node.Type: GrantFiled: November 7, 2013Date of Patent: October 24, 2017Assignee: Infineon Technologies AGInventors: Thomas Krotscheck Ostermann, Andrew Christopher Graeme Wood, Peter Maier Brandl
-
Publication number: 20170125315Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.Type: ApplicationFiled: January 11, 2017Publication date: May 4, 2017Inventors: Andrew Christopher Graeme Wood, Gernot Fasching, Marius Aurel Bodea, Thomas Krotscheck Ostermann, Erwin Bacher