Abstract: The present disclosure is directed generally to simultaneous dual-band systems and methods. A dual-band system as disclosed herein includes a plurality of pixels. Each pixel comprising a first absorber layer; a first intervening layer located adjacent the first absorber layer; a second absorber layer located adjacent to the first intervening layer; and a second intervening layer located adjacent to the second absorber layer. The plurality of pixels includes a first subset of pixels for detecting light in a first band and a second subset of pixels for detecting light in a second band. Carriers created in the first absorber layer of the first subset of pixels are collected via the first contact layer. Carriers created in the second absorber layer of the second subset of pixels are collected via the second contact layer and carriers created in the first absorber layer remain uncollected.

Abstract: A device and method for an amplitude modulated optical pickup for a stringed instrument are disclosed. A first optical source comprising a first output signal comprising a first carrier frequency is provided and a first photodetector is in optical communication with the first optical source. A vibrating element such as a string on a musical instrument is disposed in an optical path between the first optical source and the first photodetector whereby a vibration of the element varies and modulates an amplitude of the first output signal received by the photodetector that is proportional to an element vibration amplitude and is at the same frequency as the element vibration frequency. An amplitude modulated (AM) photodetector signal output is generated from the first photodetector. The resultant signal is then demodulated with appropriate circuitry to produce a substantially noise free electronic signal representative of the element vibration frequency.

Abstract: Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

Abstract: Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.

Abstract: Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.

Abstract: Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.