Patents by Inventor Andrew D. Mitchell

Andrew D. Mitchell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated ESD protection device
    Patent number: 7995316
    Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.
    Type: Grant
    Filed: May 26, 2009
    Date of Patent: August 9, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: John H. Carpenter, Jr., Wayne Tien-Feng Chen, Andrew D. Mitchell
  • INTEGRATED ESD PROTECTION DEVICE
    Publication number: 20090230426
    Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.
    Type: Application
    Filed: May 26, 2009
    Publication date: September 17, 2009
    Applicant: Texas Instruments Incorporated
    Inventors: John H. Carpenter, JR., Wayne Tien-Feng Chen, Andrew D. Mitchell
  • Integrated ESD protection device
    Publication number: 20080029782
    Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.
    Type: Application
    Filed: August 4, 2006
    Publication date: February 7, 2008
    Inventors: John H. Carpenter, Wayne Tien-Feng Chen, Andrew D. Mitchell