Abstract: A hanger assembly includes: a main body; a lock ring coupled to the main body and configured to expand radially outward into a profile on an inner diameter of the wellhead; and an actuator, wherein the actuator is capable of transferring an axial force from the actuator into outward radial expansion of the lock ring toward the profile on the inner diameter of the wellhead. An interface between the actuator and the lock ring is shaped such that: axially downward movement of the actuator from a starting position to an intermediate position actuates the lock ring into the profile; and axially downward movement of the actuator from the intermediate position to a pre-load position applies a pre-load to the hanger assembly.

Abstract: Implantable devices and associated devices, systems, and methods are disclosed herein. The devices and systems of the present technology may be equipped with electronic components that provide a platform for remote patient and/or device monitoring. Operation of an implantable devices and/or one or more components thereof can be modulated over time depending on certain conditions. This modulation can include limiting wireless data communication with external devices to certain time intervals, varying parameters of data collection by sensing elements, and/or controlling power supplied to electronic components, for example. In some examples, an implantable device may operate in a low-power standby state in which data is obtained via sensing elements and stored in local data storage, but the data is not wirelessly transmitted to an external device until a modulation signal is received by the implantable device, causing the implantable device to change to a more active power state.

Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.

Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.

Abstract: An integrated electrostatic discharge (ESD) device includes a first ESD structure coupled to a pad terminal of the integrated ESD device and a second ESD structure coupled to a ground terminal of the integrated ESD device. The integrated ESD device also comprises a diffusion region that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.