Patents by Inventor Andrew David Bain
Andrew David Bain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10043792Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.Type: GrantFiled: November 8, 2016Date of Patent: August 7, 2018Assignee: Analog Devices, Inc.Inventors: Edward John Coyne, Patrick Martin McGuinness, Paul Malachy Daly, Bernard Patrick Stenson, David J. Clarke, Andrew David Bain, William Allan Lane
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Publication number: 20170117266Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.Type: ApplicationFiled: November 8, 2016Publication date: April 27, 2017Inventors: Edward John Coyne, Patrick Martin McGuinness, Paul Malachy Daly, Bernard Patrick Stenson, David J. Clarke, Andrew David Bain, William Allan Lane
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Patent number: 9520486Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.Type: GrantFiled: November 4, 2009Date of Patent: December 13, 2016Assignee: Analog Devices, Inc.Inventors: Edward John Coyne, Patrick Martin McGuinness, Paul Malachy Daly, Bernard Patrick Stenson, David J. Clarke, Andrew David Bain, William Allan Lane
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Patent number: 8513713Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: GrantFiled: May 10, 2012Date of Patent: August 20, 2013Assignee: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8390039Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.Type: GrantFiled: November 2, 2009Date of Patent: March 5, 2013Assignee: Analog Devices, Inc.Inventors: Derek Frederick Bowers, Andrew David Bain, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8357985Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: January 13, 2012Date of Patent: January 22, 2013Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8350352Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: November 2, 2009Date of Patent: January 8, 2013Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8263469Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: GrantFiled: October 6, 2011Date of Patent: September 11, 2012Assignee: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20120217551Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Applicant: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson, William Allan Lane
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Patent number: 8193046Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: GrantFiled: November 2, 2009Date of Patent: June 5, 2012Assignee: Analog Devices, Inc.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Publication number: 20120112307Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: ApplicationFiled: January 13, 2012Publication date: May 10, 2012Applicant: ANALOG DEVICES, INC.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson
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Patent number: 8120136Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: GrantFiled: November 2, 2009Date of Patent: February 21, 2012Assignee: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson
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Publication number: 20120028432Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: ApplicationFiled: October 6, 2011Publication date: February 2, 2012Applicant: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Patent number: 8058704Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: GrantFiled: November 2, 2009Date of Patent: November 15, 2011Assignee: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20110101424Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: ANALOG DEVICES, INC.Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Publication number: 20110101423Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: ANALOG DEVICES, INC.Inventors: Derek Frederick Bowers, Andrew David Bain, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuinness, Bernard Patrick Stenson, William Allan Lane
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Publication number: 20110101486Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: Analog Devices, Inc.Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson
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Publication number: 20110101500Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.Type: ApplicationFiled: November 2, 2009Publication date: May 5, 2011Applicant: Analog Devices, Inc.Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
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Publication number: 20110101444Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.Type: ApplicationFiled: November 4, 2009Publication date: May 5, 2011Applicant: Analog Devices, Inc.Inventors: Edward John Coyne, Patrick Martin McGuinness, Paul Malachy Daly, Bernard Patrick Stenson, David J. Clarke, Andrew David Bain, William Allan Lane
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Patent number: 7807972Abstract: The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element. The cap includes a diffractive optical element and an aperture stop which collectively determine the wavelength of incident radiation that is allowed through the cap and onto the at least one optical element.Type: GrantFiled: February 11, 2008Date of Patent: October 5, 2010Assignee: Analog Devices, Inc.Inventors: Paul Lambkin, William A. Lane, Andrew David Bain