Abstract: The present invention concerns the design of an environmentally friendly and efficient fluorous phase based on dendritic architectures containing short semifluorinated groups on their periphery.

Abstract: The present invention concerns the design of an environmentally friendly and efficient fluorous phase based on dendritic architectures containing short semifluorinated groups on their periphery.

Abstract: The invention provides a polymer having (a) at least one repeat unit derived from an ethylenically unsaturated compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one repeat unit derived from an ethylenically unsaturated cyclic compound of structure: (I) wherein n is 0, 1, or 2; and R2 to R4 are independently H; C1-C10 alkyl or alkoxy, optionally substituted by halogen or ether oxygens; or C6-C20 aryl. These polymers can be used in making photoresist compositions and coated substrates.

Abstract: The present invention provides novel fluorine-containing copolymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered heterocyclic ring and, optionally, other components. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The copolymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: This invention provides novel fluorine containing polymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered carbocyclic ring and, optionally, other components. The polymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: The invention relates to a photoresist composition having a protecting group and a protected material incorporated in a cyclic chemical structure. In this invention a protected material has a cyclic ether group or cyclic ester group as a protecting group. A specific example of a cyclic ether group is an alkylene oxide, such as an oxetane group, substituted with one or more fluorinated alkyl groups. A specific example of a cyclic ester is a lactone which may be substituted with methyl groups. The photoresist composition further includes a photoactive component. The photoresist composition of this invention has a high transparency to ultraviolet radiation, particularly at short wavelengths such as 193 nm and 157 nm.

Abstract: The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf?)OR wherein Rf and Rf? are the same or different fluoroalkyl groups of from one or taken together are (CF2)a wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 ?m at a wavelength of 157 nm.

Abstract: The invention relates to a photoresist composition having a protecting group and a protected material incorporated in a cyclic chemical structure. In this invention a protected material has a cyclic ether group or cyclic ester group as a protecting group. A specific example of a cyclic ether group is an alkylene oxide, such as an oxetane group, substituted with one or more fluorinated alkyl groups. A specific example of a cyclic ester is a lactone which may be substituted with methyl groups. The photoresist composition further includes a photoactive component. The photoresist composition of this invention has a high transparency to ultraviolet radiation, particularly at short wavelengths such as (193) nm and (157) nm.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of esters derived from fluoroalcohol functional groups that simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.

Abstract: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound and at least one compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresists comprise a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group covalently attached to a carbon atom contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one covalently attached carbon atom, wherein the atom or group is selected from the group consisting of fluorine perfluoroalkyl and perfluoroalkoxy.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of esters derived from fluoroalcohol functional groups that simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: Polycyclic fluorine-containing polymers and photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The polycyclic fluorine-containing polymer is derived from a repeat unit comprising the polycyclic reaction product of norbomadiene and a fluorolefin. The polymer may also contain a repeat unit derived from one or more additional monomers such as a fluorolefin, specifically tetrafluoroethylene, a fluoroalcohol, or an acrylate.

Abstract: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component.

Abstract: A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.

Abstract: A partially-fluorinated surfactant having internal methylene groups and having the formula R.sub.f --(CH.sub.2).sub.m --R'.sub.f --COOM wherein m is 1-3, R.sub.f is perfluoroalkyl or perfluoroalkoxy, containing 3-8 carbon atoms, R'.sub.f is linear or branched perfluoroalkylene containing 1-4 carbon atoms, and M is NH.sub.4, Li, Na, K, or H is useful in polymerization of fluorinated monomers. High molecular weight can be achieved in homopolymerization of tetrafluoroethylene.

Abstract: Disclosed herein are novel amorphous tetrafluoroethylene-hexafluoropropylene (TFE-HFP) dipolymers, and other copolymers containing TFE, HFP and a third monomer, many of which are more random than previous amorphous TFE-HFP copolymers, as well as a novel high productivity continuous process for making these polymers. The polymers are particularly useful in the form of coatings, films and encapsulants.

Abstract: Disclosed herein are partially fluorinated (co)polymers containing sulfonic acid or sulfonate salt groups, processes for making those polymers, and intermediates for those (co)polymers. The (co)polymers are useful as ion-exchange resins and (in the sulfonic acid form) acid catalysts.

Abstract: Disclosed herein are partially fluorinated (co)polymers containing sulfonic acid or sulfonate salt groups, processes for making those polymers, and intermediates for those (co)polymers. The (co)polymers are useful as ion-exchange resins and (in the sulfonic acid form) acid catalysts.

Abstract: Disclosed herein are novel monomers of the formula CF.sub.2 .dbd.CF(CF.sub.2).sub.n CH.sub.2 OCF.dbd.CF.sub.2, wherein n is 1, 2 or 3, and novel intermediates of the formula CF.sub.2 C1CFCl(CF.sub.2).sub.n CH.sub.2 OCF.dbd.CF.sub.2 wherein n is 1, 2 or 3. Also disclosed is a fluoro-polymer containing cyclic units when the monomer wherein n is 1 is free radically polymerized. The polymer is particularly useful in for coatings and encapsulants.