Abstract: A resonator is disclosed for the detection of a mass analyte, such as a biological analyte. The resonator has: a piezoelectric layer formed of a piezoelectric material; a first resonator region and a second resonator region each occupying a corresponding region of the piezoelectric layer; electrodes disposed to apply a driving signal to the piezoelectric layer to generate bulk acoustic waves, the electrodes being common to the first resonator region and the second resonator region. In operation, the first resonator region has a first resonant frequency and the second resonator region has a second resonant frequency. The first resonator region and the second resonator region differ from each other in that the first resonator region is adapted to receive a mass analyte for the mass analyte selectively to attach to a surface of the first resonator region.

Abstract: Disclosed is a method of sensing a target analyte in a liquid sample using a bulk acoustic wave resonator device. The liquid sample is placed on the bulk acoustic wave resonator device which is operated to generate bulk acoustic waves. A shift in the fundamental resonant frequency of the bulk acoustic wave resonator device is measured. The bulk acoustic wave resonator device comprises a resonator structure and an acoustic decoupling layer. The resonator structure comprises: a piezoelectric material layer; electrodes arranged to apply a driving signal to the piezoelectric material layer to generate bulk acoustic waves; and a resonator structure surface. The acoustic decoupling layer is formed over the resonator structure surface. The acoustic decoupling layer acoustic impedance is: up to ? times or not less than 5 times the resonator structure acoustic impedance, and up to ? times or not less than 5 times the liquid sample acoustic impedance.

Abstract: A resonator is disclosed for the detection of a mass analyte, such as a biological analyte. The resonator has: a piezoelectric layer formed of a piezoelectric material; a first resonator region and a second resonator region each occupying a corresponding region of the piezoelectric layer; electrodes disposed to apply a driving signal to the piezoelectric layer to generate bulk acoustic waves, the electrodes being common to the first resonator region and the second resonator region. In operation, the first resonator region has a first resonant frequency and the second resonator region has a second resonant frequency. The first resonator region and the second resonator region differ from each other in that the first resonator region is adapted to receive a mass analyte for the mass analyte selectively to attach to a surface of the first resonator region.

Abstract: Disclosed is a method of sensing a target analyte in a liquid sample using a bulk acoustic wave resonator device. The liquid sample is placed on the bulk acoustic wave resonator device which is operated to generate bulk acoustic waves. A shift in the fundamental resonant frequency of the bulk acoustic wave resonator device is measured. The bulk acoustic wave resonator device comprises a resonator structure and an acoustic decoupling layer. The resonator structure comprises: a piezoelectric material layer; electrodes arranged to apply a driving signal to the piezoelectric material layer to generate bulk acoustic waves; and a resonator structure surface. The acoustic decoupling layer is formed over the resonator structure surface. The acoustic decoupling layer acoustic impedance is: up to ? times or not less than 5 times the resonator structure acoustic impedance, and up to ? times or not less than 5 times the liquid sample acoustic impedance.

Abstract: Provided is a method for measurement of a change in environment at a sensor. The sensor has: a first layer formed of a piezoelectric material; a second layer formed adjacent the first layer and acoustically coupled with the first layer; and electrodes disposed to apply a driving signal to the first layer to generate bulk acoustic waves. The temperature coefficient of frequency of the first layer is different to that of the second layer. In the method, a first layer resonant frequency associated with the first layer and a combination resonant frequency associated with a combination of the first and second layers are detected. A shift in one or both of the first layer resonant frequency and the combination resonant frequency is detected. A portion of the shift caused by a temperature change at the sensor is identified. Another portion of the shift caused by an environmental change at the sensor other than the temperature change is identified.

Abstract: Provided is a method for measurement of a change in environment at a sensor. The sensor has: a first layer formed of a piezoelectric material; a second layer formed adjacent the first layer and acoustically coupled with the first layer; and electrodes disposed to apply a driving signal to the first layer to generate bulk acoustic waves. The temperature coefficient of frequency of the first layer is different to that of the second layer. In the method, a first layer resonant frequency associated with the first layer and a combination resonant frequency associated with a combination of the first and second layers are detected. A shift in one or both of the first layer resonant frequency and the combination resonant frequency is detected. A portion of the shift caused by a temperature change at the sensor is identified. Another portion of the shift caused by an environmental change at the sensor other than the temperature change is identified.

Abstract: Systems and methods are provided to improve the performance of electronic and optoelectronic devices made using organic semiconductor processing technology. An ink-jet device dispenses an organic composite mixture onto a substrate. The mixture includes a semiconducting polymer and nanomaterials dispersed into an organic solvent. The type of solvent used preferably achieves effective dispersion of the polymer and nanomaterials in the solvent to minimize the occurrence of clogging of the ink-jet nozzles. The range of nanomaterials include, but are not limited to, organic and inorganic, single or multi-walled nanotubes, nanowires, nanodots, quantum dots, nanorods, nanocrystals, nanotetrapods, nanotripods, nanobipods, nanoparticles, nanosaws, nanosprings, nanoribbons, any branched nanostructure, and any mixture of these nanoshaped materials. The nanostructures can be aligned on the substrate to improve the carrier mobility in the organic semiconductors.