Abstract: A composition having a crosslinking compound that has the following structure (I) wherein R is OH, NH2, halide, ester, amine, ether, or amide, and x is 2-6 and A is an arene moiety having a molecular weight of less than about 10,000. A mixture including the composition and a polymer, a method for forming the mixture and a crosslinked polymer are also disclosed.

Abstract: A composition having a crosslinking compound that has the following structure (I) wherein R is OH, NH2, halide, ester, amine, ether, or amide, and x is 2-6 and A is an arene moiety having a molecular weight of less than about 10,000. A mixture including the composition and a polymer, a method for forming the mixture and a crosslinked polymer are also disclosed.

Abstract: A polymeric composition comprising a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n- where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1 m; a polysulfone, a polyimide, a poly(etherketone), a polyurea, a polyurethane, and combinations thereof and a second polymer comprising a per(phenylethynyl) arene polymer derivative. Cured films containing the polymer can exhibit at least one of the following properties: Tg from 160° C. to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %. Accordingly, the polymer is especially useful, for example, in interlayer dielectrics and in die-attach adhesives.

Abstract: A polymeric composition comprising a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n- where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1 m; a polysulfone, a polyimide, a poly(etherketone), a polyurea, a polyurethane, and combinations thereof and a second polymer comprising a per(phenylethynyl) arene polymer derivative. Cured films containing the polymer can exhibit at least one of the following properties: Tg from 160° C. to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %. Accordingly, the polymer is especially useful, for example, in interlayer dielectrics and in die-attach adhesives.

Abstract: A polymeric composition comprising a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n- where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1 m; a polysulfone, a polyimide, a poly(etherketone), a polyurea, a polyurethane, and combinations thereof and a second polymer comprising a per(phenylethynyl) arene polymer derivative. Cured films containing the polymer can exhibit at least one of the following properties: Tg from 160° C. to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %. Accordingly, the polymer is especially useful, for example, in interlayer dielectrics and in die-attach adhesives.

Abstract: A resistivity stable aqueous dispersion and a method for making an aqueous dispersion. The dispersion including polythienothiophene and at least one colloid-forming polymeric acid having a pH of from about 3 to about 10. The method includes preparing an aqueous dispersion containing polythienothiophene and adjusting the pH of the dispersion to a sufficiently high pH to provide resistivity stability. Devices utilizing layers formed of pH adjusted polythienothiophene are also disclosed.

Abstract: A resistivity stable aqueous dispersion and a method for making an aqueous dispersion. The dispersion including polythienothiophene and at least one colloid-forming polymeric acid having a pH of from about 3 to about 10. The method includes preparing an aqueous dispersion containing polythienothiophene and adjusting the pH of the dispersion to a sufficiently high pH to provide resistivity stability. Devices utilizing layers formed of pH adjusted polythienothiophene are also disclosed.

Abstract: Partially and fully fluorinated alkyl substituted thienothiophene monomers (and polymers thereof) wherein the monomers are represented by the formula: wherein R is a partially or fully fluorinated primary, secondary or tertiary alkyl having from 1 to 8 carbon atoms; and X and X? are independently selected from the group consisting of H, F, Cl, Br, I, MgCl, ?—COR?, —C?CH, and a polymerizable cyclic pi-conjugated carbon-ring structure optionally comprising S, N or O heteroatoms; wherein R? is a primary, secondary or tertiary alkyl having from 1 to 6 carbon atoms, and R? is H or a primary, or tertiary alkyl having from 1 to 6 carbon atoms.

Abstract: Partially and fully fluorinated alkyl substituted thienothiophene monomers (and polymers thereof) wherein the monomers are represented by the formula: wherein R is a partially or fully fluorinated primary, secondary or tertiary alkyl having from 1 to 8 carbon atoms; and X and X? are independently selected from the group consisting of H, F, Cl, Br, I, MgCl, MgBr, Mgl, Sn(R?)3, CH?CHR?, —OR?, —COOR?, —S—COR?, —B(OR?)2, —COR?, —C?CH, and a polymerizable cyclic pi-conjugated carbon-ring structure optionally comprising S, N or O heteroatoms; wherein R? is a primary, secondary or tertiary alkyl having from 1 to 6 carbon atoms, and R? is H or a primary, secondary or tertiary alkyl having from 1 to 6 carbon atoms.

Abstract: Disclosed are monomers of the formula:

Abstract: Thienothiophenes compositions comprising a C3-8 secondary or tertiary alkyl group are disclosed. The thienothiophenes may be represented by the formula: where R is C3-8 secondary or tertiary alkyl, e.g., isopropyl, tert-butyl, tert-pentyl, isopentyl, and 2-ethylhexyl, X and X? are independently selected from the group consisting of H, halogen atoms (e.g., F, Cl, Br, and I), MgCl, MgBr, Mgl, Sn(R?)3, (where R? is C1-6 alkyl or —OC1-6 alkyl), boronic acid, boronic ester, —CH?CHR? (where R? is H or C1-6 alkyl), —OC1-6 alkyl, —COOC1-6 alkyl, —S—COR??, —COR?? (where R?? is H or C1-6 alkyl), —C?CH, and polymerizable aromatic rings such as phenyl, naphthalene, pyrrole, dithiophene, thienothiophene, thiophene and so forth.

Abstract: Thienothiophene monomers having an SF5 group and conducting oligomers and polymers formed by the polymerization of such monomers and their use as hole injection materials, charge transport materials, or as semiconductors. The compound may be of the formula: where X and X? are independently H, halogen atoms (e.g., F, Cl, Br, and I), MgCl, MgBr, MgI, Sn(R?)3, where R? is C1-6 alkyl or —OC1-6 alkyl, boronic acid, boronic ester, —CH?CHR? (where R? is H or C1-6 alkyl), —OC1-6 alkyl, —COOC1-6 alkyl, —S—COR?? and —COR?? (where R?? is H or C1-6 alkyl), —C?CH, or polymerizable aromatic rings (such as phenyl, naphthalene, pyrrole, dithiophene, thienothiophene, thiophene and so forth.

Abstract: Thienothiophene monomers having an SF5 group and conducting oligomers and polymers formed by the polymerization of such monomers and their use as hole injection materials, charge transport materials, or as semiconductors. The compound may be of the formula: where X and X? are independently H, halogen atoms (e.g., F, Cl, Br, and I), MgCl, MgBr, Mgl, Sn(R?)3, where R? comprises C1-6 alkyl or —OC1-6 alkyl, boronic acid, boronic ester, —CH?CHR? (where R? comprises H or C1-6 alkyl), —OC1-6 alkyl, —COOC1-6 alkyl, —S—COR?? and —COR?? (where R?? comprises H or C1-6 alkyl), —C?CH, or polymerizable aromatic rings (such as phenyl, naphthalene, pyrrole, dithiophene, thienothiophene, thiophene and so forth).

Abstract: The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m2/gram as measured by adsorption of N2 or Kr using the BET method.

Abstract: The present invention relates to monolith catalysts comprising a catalytic metal deposited onto a coated monolith substrate comprising a wash coat applied to a monolith substrate wherein the monolith catalysts have a surface area ranging from 0.1 to 25 m2/gram as measured by adsorption of N2 or Kr using the BET method. The invention also relates to the coated monolith substrates used in such monolith catalysts. The monolith catalysts of the present invention are particularly suited toward use in hydrogenation processes which employ an immiscible mixture of an organic reactant in water.

Abstract: The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m2/gram as measured by adsorption of N2 or Kr using the BET method.

Abstract: The present invention relates to an improved for the hydrogenation of an immiscible mixture of an organic reactant in water. The immiscible mixture can result from the generation of water by the hydrogenation reaction itself or, by the addition of, water to the reactant prior to contact with the catalyst. The improvement resides in effecting the hydrogenation reaction in a monolith catalytic reactor from 100 to 800 cpi, at a superficial velocity of from 0.1 to 2 m/second in the absence of a cosolvent for the immiscible mixture. In a preferred embodiment, the hydrogenation is carried out using a monolith support which has a polymer network/carbon coating onto which a transition metal is deposited.

Abstract: This invention describes an integrated process for making ethylidene bisformamide in high yield wherein water, which is formed as a reaction by-product, is readily removed from the reaction product mixture without adversely affecting the efficiency of the overall process. The process contemplates isolating the reaction zone from the separation zone and comprises circulating a stream of formamide through a reaction zone containing a solid acidic catalyst and a separation zone; introducing acetaldehyde into the circulating stream of formamide to form a reaction mixture and contacting the reaction mixture with the solid acidic catalyst under reaction conditions sufficient to form a product mixture comprising ethylidene bisformamide and water; and separating water from the product mixture in the separation zone to form a water-depleted product mixture containing ethylidene bisformamide.