Patents by Inventor Andrew Gallian

Andrew Gallian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Saturable absorbers for Q-switching of middle infrared laser cavities
    Patent number: 10027085
    Abstract: A Q-switched laser includes a laser cavity including a cavity mirror and an output coupler mirror. The Q-switched laser also includes a doped laser gain material disposed in the laser cavity and a Q-switch including a saturable absorber comprising Fe2+:ZnSe or Fe2+:ZnS.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: July 17, 2018
    Assignee: The UAB Research Foundation
    Inventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
  • SATURABLE ABSORBERS FOR Q-SWITCHING OF MIDDLE INFRARED LASER CAVITIES
    Publication number: 20160294151
    Abstract: A Q-switched laser includes a laser cavity including a cavity mirror and an output coupler mirror. The Q-switched laser also includes a doped laser gain material disposed in the laser cavity and a Q-switch including a saturable absorber comprising Fe2+:ZnSe or Fe2+:ZnS.
    Type: Application
    Filed: June 14, 2016
    Publication date: October 6, 2016
    Applicant: The UAB Research Foundation
    Inventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
  • Saturable absorbers for Q-switching of middle infrared laser cavaties
    Patent number: 9391424
    Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: July 12, 2016
    Assignee: THE UAB RESEARCH FOUNDATION
    Inventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
  • SATURABLE ABSORBERS FOR Q-SWITCHING OF MIDDLE INFRARED LASER CAVATIES
    Publication number: 20140362879
    Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
    Type: Application
    Filed: August 26, 2014
    Publication date: December 11, 2014
    Applicant: The UAB Research Foundation
    Inventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
  • Saturable absorbers for Q-switching of middle infrared laser cavaties
    Patent number: 8817830
    Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: August 26, 2014
    Assignee: The UAB Research Foundation
    Inventors: Sergey Mirov, Andrew Gallian, Alan Martinez, Vladimir Fedorov
  • SATURABLE ABSORBERS FOR Q-SWITCHING OF MIDDLE INFRARED LASER CAVATIES
    Publication number: 20080101423
    Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
    Type: Application
    Filed: October 26, 2007
    Publication date: May 1, 2008
    Inventors: Sergey Mirov, Andrew Gallian, Alan Martinez, Vladimir Fedorov