Patents by Inventor Andrew Gordon Norman

Andrew Gordon Norman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11621365
    Abstract: Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.
    Type: Grant
    Filed: June 17, 2020
    Date of Patent: April 4, 2023
    Assignee: Alliance for Sustainable Energy, LLC
    Inventor: Andrew Gordon Norman
  • Patent number: 11302531
    Abstract: Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi2Se3 (0001) substrates in an MOCVD reactor.
    Type: Grant
    Filed: August 26, 2020
    Date of Patent: April 12, 2022
    Assignees: Alliance for Sustainable Energy, LLC, Colorado School of Mines
    Inventors: Andrew Gordon Norman, Celeste Louise Melamed, Eric Steven Toberer, William Edwin McMahon
  • Publication number: 20200395213
    Abstract: Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi2Se3 (0001) substrates in an MOCVD reactor.
    Type: Application
    Filed: August 26, 2020
    Publication date: December 17, 2020
    Inventors: Andrew Gordon NORMAN, Celeste Louise MELAMED, Eric Steven TOBERER, William Edwin MCMAHON
  • Publication number: 20200395500
    Abstract: Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.
    Type: Application
    Filed: June 17, 2020
    Publication date: December 17, 2020
    Inventor: Andrew Gordon NORMAN
  • Publication number: 20180366325
    Abstract: Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 20, 2018
    Inventors: Andrew Gordon Norman, Celeste Louise Melamed, Eric Steven Toberer, William Edwin McMahon