Patents by Inventor Andrew Habermas

Andrew Habermas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110121256
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: January 27, 2011
    Publication date: May 26, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • Publication number: 20110117717
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: January 27, 2011
    Publication date: May 19, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • Patent number: 7897955
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Grant
    Filed: November 3, 2008
    Date of Patent: March 1, 2011
    Assignee: Seagate Technology LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • Publication number: 20100327248
    Abstract: A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard mask to form a reduced first hard mask by using the reduced second hard mask as a mask and using an etch stop layer as an etch stop. After patterning both hard masks, then patterning a functional layer by using the reduced first hard mask as a mask. In the resulting memory cell, the first hard mask layer is also a top lead, and the diameter of the first hard mask layer is at least essentially the same as the diameter of the etch stop layer, the adhesion layer, and the functional layer.
    Type: Application
    Filed: June 29, 2009
    Publication date: December 30, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Antoine Khoueir, Shuiyuan Huang, Andrew Habermas, Helena Stadniychuk, Ivan P. Ivanov, Yongchul Ahn
  • Publication number: 20100120175
    Abstract: A method of making a memory cell or magnetic element by double patterning. The method includes providing a starting stack having a first area, masking a portion of the first area of the starting stack resulting in a first masked portion and a first unmasked portion. Then, removing the first unmasked portion of the starting stack to provide a second area. A portion of this second area is masked, resulting in a second masked portion and a second unmasked portion. The method also includes removing the second unmasked portion to provide a third area, with the finished cell or element being the third area.
    Type: Application
    Filed: December 19, 2008
    Publication date: May 13, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Andrew Habermas, Paul Anderson
  • Publication number: 20100110759
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: November 3, 2008
    Publication date: May 6, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas