Abstract: A microelectromechanical (MEM) device may comprise a first stage comprising a first stage reflective surface; a first frame pivotally coupled to the first stage; a second frame coupled to the first frame; and one or more of: second frame flexures positioned on the first frame and the second frame, or first stage flexures positioned on the first stage; and a tensioning structure. The tensioning structure may be coupled to the first frame to facilitate an amount of tension in one or more of the second frame flexures or the first stage flexures to prevent buckling of the one or more of the second frame flexures or the first stage flexures.

Abstract: A MEM array may comprise a first stage comprising a first stage reflective surface, and a second stage comprising a second stage reflective surface. The MEM array may comprise a base wafer positioned below the first stage and the second stage; and a first frame pivotally coupled to the first stage. The first frame may be pivotally coupled to a second frame, which may comprise a second frame high aspect ratio (AR) member that may be operable to reduce mechanical motion of the second stage.

Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.

Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Abstract: A sensor having a proximal end and a distal end includes an anchor, a proof mass, a fixed finger, and a movable finger. The anchor is disposed at the proximal end. The proof mass is coupled to the anchor and disposed at a first distance from the anchor. The fixed finger and the movable finger are coupled to the anchor and disposed at a second distance from the anchor at the distal end. The fixed and movable fingers are configured to measure a first capacitance area. A ratio of the first distance over the second distance is between about 0.2 to about 0.6. The ratio is configured to deflect the movable finger at least about 1 ?m relative to the fixed finger.

Abstract: A MEMS includes, in part, a parallel plate capacitor, a proofmass adapted to be displaced by a first distance from a rest state in response to a first voltage applied to the capacitor, and a piezoelectric material adapted to generate a second voltage in response to an external force applied to the MEMS. The second voltage causes the MEMS to transition from a standby mode to an active mode of operation. The proofmass is displaced by a second distance in response to the external force thereby causing the piezoelectric material to generate the second voltage. A spring couples the proofmass to the piezoelectric material, and a transistor turns on in response to the second voltage thereby causing the MEMS to transition to the active mode of operation. The proofmass returns to the rest state when the MEMS is in the active mode of operation.

Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Abstract: A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.

Abstract: A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.

Abstract: A MEMS includes, in part, a parallel plate capacitor, a proofmass adapted to be displaced by a first distance from a rest state in response to a first voltage applied to the capacitor, and a piezoelectric material adapted to generate a second voltage in response to an external force applied to the MEMS. The second voltage causes the MEMS to transition from a standby mode to an active mode of operation. The proofmass is displaced by a second distance in response to the external force thereby causing the piezoelectric material to generate the second voltage. A spring couples the proofmass to the piezoelectric material, and a transistor turns on in response to the second voltage thereby causing the MEMS to transition to the active mode of operation. The proofmass returns to the rest state when the MEMS is in the active mode of operation.

Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.