Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A hybridized image sensor includes a first die and a second die. The first die includes a first surface, a first plurality of conductive bumps fabricated on the first surface, and a first alignment feature fabricated on the first surface. The second die includes a second surface, a second plurality of conductive bumps fabricated on the second surface, and second alignment features fabricated on the second surface, wherein the first alignment features interact with the second alignment features to align the first plurality of conductive bumps with the second plurality of conductive bumps.

Abstract: A hybridized image sensor includes a first die and a second die. The first die includes a first surface, a first plurality of conductive bumps fabricated on the first surface, and a first alignment feature fabricated on the first surface. The second die includes a second surface, a second plurality of conductive bumps fabricated on the second surface, and second alignment features fabricated on the second surface, wherein the first alignment features interact with the second alignment features to align the first plurality of conductive bumps with the second plurality of conductive bumps.

Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A method of cementing an oil or gas well for abandonment comprises cutting the production tubing 6 above the production packer 8, setting a tubing plug 9 in the tubing and then cutting the tubing. A bridge plug may be installed at the level of the cut, which spans the full diameter of the well casing 3. An agitator assembly 20 comprising an agitator 24, packer 21 and burst sub 23, with a running tool fitted to the top, is run down the tubing on wire line. Cement is then injected into the tubing 6, which flows through the agitator assembly and causes the tubing to vibrate. The cement fills the tubing but also flows back up the A annulus between the casing and production tubing. Vibration of the tubing assists the formation of a good quality cement plug extending all around the annulus over a substantial length of the well.

Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A modulated light receiver includes a photo-sensitive element, an electromagnetic interference (EMI) detection circuit, and a decision-making controller. The photo-sensitive element is configured to generate an electrical signal in response to modulated light. The electromagnetic interference (EMI) detection circuit is configured to generate an electrical signal in response to EMI. The decision-making controller is electrically coupled to the photo-sensitive element and the EMI detection circuit, wherein the decision-making controller generates an output based on the inputs received from the photo-sensitive element and the EMI detection circuit.

Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A modulated light receiver includes a photo-sensitive element, an electromagnetic interference (EMI) detection circuit, and a decision-making controller. The photo-sensitive element is configured to generate an electrical signal in response to modulated light. The electromagnetic interference (EMI) detection circuit is configured to generate an electrical signal in response to EMI. The decision-making controller is electrically coupled to the photo-sensitive element and the EMI detection circuit, wherein the decision-making controller generates an output based on the inputs received from the photo-sensitive element and the EMI detection circuit.

Abstract: An oven splatter guard comprising: a flexible screen configured to at least reduce splatter in a working oven wherein the flexible screen is not self-supporting; and a collapsible support means configured to support the flexible screen.

Abstract: An apparatus and method for siding a building wherein the apparatus comprises an elongate planar member extending between first and second edges, top and bottom edges and having front and rear surfaces and at least one mounting block extending between first and second edges, top and bottom edges and having a rear surface wherein the at least one mounting block extends from the rear surface of the elongate planar member proximate to the top edge of the elongate planar member. The method comprises aligning each of the at least one mounting block of the siding panel with a stud location in a vertical wall and fastening the siding panel to the studs in the vertical wall through the at least one mounting block with a plurality of fasteners, so as to create a rainscreen gap between the elongate planar member and the vertical wall.

Abstract: A method of cementing an oil or gas well for abandonment comprises cutting the production tubing 6 above the production packer 8, setting a tubing plug 9 in the tubing and then cutting the tubing. A bridge plug may be installed at the level of the cut, which spans the full diameter of the well casing 3. An agitator assembly 20 comprising an agitator 24, packer 21 and burst sub 23, with a running tool fitted to the top, is run down the tubing on wire line. Cement is then injected into the tubing 6, which flows through the agitator assembly and causes the tubing to vibrate. The cement fills the tubing but also flows back up the A annulus between the casing and production tubing. Vibration of the tubing assists the formation of a good quality cement plug extending all around the annulus over a substantial length of the well.

Abstract: A method of fabricating a superlattice structure requires that atoms of a first III-V semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional III-V compound are also introduced such that the atoms of the two III-V compounds form a repeating superlattice structure of alternating thin layers. Atoms of a surfactant are also introduced into the vacuum chamber while the III-V semiconductor compounds are being introduced, or immediately thereafter, such that the surfactant atoms act to improve the quality of the resulting SL structure. The surfactant is preferably bismuth, and the III-V semiconductor compounds are preferably GaSb along with either InAs or InAsSb; atoms of each material are preferably introduced using molecular beam epitaxy. The resulting superlattice structure is suitably used to form at least a portion of an IR photodetector.

Abstract: A structure comprised of an InAsSb layer adjacent to a GaSb layer, with the adjacent InAsSb and GaSb layers repeating to form a superlattice (SL). The structure is preferably an unstrained SL, wherein the composition of the InAsSb layer is InAs0.91Sb0.09; the InAs0.91 Sb0.09 layers are preferably lattice-matched to the GaSb layers. The SL structure is preferably arranged such that the Sb component of the InAsSb layers reduces the strain in the SL structure so that it is less than that found in an InAs/GaSb Type-II Strained Layer Superlattice (SLS). The present SL structure is suitably employed as part of an infrared photodetector.

Abstract: A method of fabricating a superlattice structure requires that atoms of a first III-V semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional III-V compound are also introduced such that the atoms of the two III-V compounds form a repeating superlattice structure of alternating thin layers. Atoms of a surfactant are also introduced into the vacuum chamber while the III-V semiconductor compounds are being introduced, or immediately thereafter, such that the surfactant atoms act to improve the quality of the resulting SL structure. The surfactant is preferably bismuth, and the III-V semiconductor compounds are preferably GaSb along with either InAs or InAsSb; atoms of each material are preferably introduced using molecular beam epitaxy. The resulting superlattice structure is suitably used to form at least a portion of an IR photodetector.

Abstract: A sequence of data representing network behaviour is analysed using the technique of delay space embedding. This causes a sequence of tuples to be constructed from the data sequence. This sequence of tuples can then be represented in a multi-dimensional representation space, which allows detection of network behaviour divergent from a norm.

Abstract: Solid state devise for the calibration of microplate fluorescence and absorption readers and spectrometers is described. When present in a single moiety, the disclosed device can tell if the lamp photomultiplier tube and optical alignment of the microplate reader or spectrometer deviates from its true value. When present as graded calibration pieces, the disclosed device can be used to calibrate a fluorescence or absorption reader. Calibration pieces are shaped, polished and coated with color absorbing or fluorescent standard to fit in microplate holding trays or spectrometers which are commercially available. Solid state devices are stable and durable and very inert to manipulations and thus are more reliable and unfaltering than solutions for absorption and fluorescence microplate readers or spectrometers.

Abstract: Solid state devise for the calibration of microplate fluorescence and absorption readers and spectrometers is described. When present in a single moiety, the disclosed device can tell if the lamp photomultiplier tube and optical alignment of the microplate reader or spectrometer deviates from its true value. When present as graded calibration pieces, the disclosed device can be used to calibrate a fluorescence or absorption reader. Calibration pieces are shaped, polished and coated with color absorbing or fluorescent standard to fit in microplate holding trays or spectrometers which are commercially available. Solid state devices are stable and durable and very inert to manipulations and thus are more reliable and unfaltering than solutions for absorption and fluorescence microplate readers or spectrometers.