Patents by Inventor Andrew J. Adamczyk

Andrew J. Adamczyk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
    Patent number: 10934485
    Abstract: Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: March 2, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Andrew J. Adamczyk
  • Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
    Patent number: 10879076
    Abstract: Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: December 29, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Andrew J. Adamczyk
  • Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
    Publication number: 20190103282
    Abstract: Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.
    Type: Application
    Filed: September 26, 2018
    Publication date: April 4, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Chi-Hsien Kuo, Andrew J. Adamczyk
  • Use of silyl bridged alkyl compounds for dense OSG films
    Patent number: 10249489
    Abstract: Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II): wherein, R1, R2, R3, R4, R5, and R6 are as defined herein, and applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: April 2, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
  • Etching Solution for Selectively Removing Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
    Publication number: 20190088492
    Abstract: Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.
    Type: Application
    Filed: August 22, 2018
    Publication date: March 21, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Andrew J. Adamczyk
  • Etching Solution for Selectively Removing Silicon Over Silicon-Germanium Alloy From a Silicon-Germanium/ Silicon Stack During Manufacture of a Semiconductor Device
    Publication number: 20190085240
    Abstract: Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.
    Type: Application
    Filed: August 22, 2018
    Publication date: March 21, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Andrew J. Adamczyk
  • USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS
    Publication number: 20180122632
    Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
    Type: Application
    Filed: October 20, 2017
    Publication date: May 3, 2018
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk