Patents by Inventor Andrew J. Felker

Andrew J. Felker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacture of bright GaN LEDs using a selective removal process
    Patent number: 8912025
    Abstract: A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: December 16, 2014
    Assignee: Soraa, Inc.
    Inventors: Andrew J. Felker, Rafael L. Aldaz, Max Batres
  • Techniques of forming ohmic contacts on GaN light emitting diodes
    Patent number: 8389305
    Abstract: A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: March 5, 2013
    Assignee: Soraa, Inc.
    Inventors: Andrew J. Felker, Nicholas Andrew Vickers
  • Techniques of Forming Ohmic Contacts on GaN Light Emitting Diodes
    Publication number: 20130017635
    Abstract: A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
    Type: Application
    Filed: March 13, 2012
    Publication date: January 17, 2013
    Applicant: Sorra, Inc.
    Inventors: Andrew J. Felker, Nicholas Andrew Vickers
  • Method for Manufacture of Bright GaN LEDs Using a Selective Removal Process
    Publication number: 20120135553
    Abstract: A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.
    Type: Application
    Filed: November 23, 2011
    Publication date: May 31, 2012
    Applicant: Soraa, Inc.
    Inventors: Andrew J. Felker, Rafael L. Aldaz, Max Batres
  • Techniques of forming Ohmic contacts on GaN light emitting diodes
    Patent number: 8148180
    Abstract: A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: April 3, 2012
    Assignee: Sorra, Inc.
    Inventors: Andrew J. Felker, Nicholas Andrew Vickers
  • Techniques of Forming Ohmic Contacts on GaN Light Emitting Diodes
    Publication number: 20120009705
    Abstract: A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 12, 2012
    Applicant: Soraa, Inc.
    Inventors: Andrew J. Felker, Nicholas Andrew Vickers