Abstract: A method is provided that can include activating at least two wireless communication channels in parallel, between a first wireless transceiver and a second wireless transceiver. Each of the at least two wireless communication channels can operate at a different radio carrier frequency, and the first wireless transceiver may be part of a first vehicle. The method can also include transmitting, by the first wireless transceiver, common information in parallel on the at least two wireless communication channels to the second wireless transceiver and deactivating the at least two wireless communication channels.

Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.

Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.

Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.

Abstract: A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.

Abstract: A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.

Abstract: Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Ecrit semiconductors are presented. A dielectric layer is deposited on a high Ecrit substrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Ecrit substrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Ecrit source and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.

Abstract: A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.

Abstract: A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.

Abstract: Disclosed herein is a binder-free product and process for making the product. The product is a mechanically stable, water resistant torrefied biomass product that does not comprise an extrinsic binder additive. The product is made using a combination of appropriate pre-treatment steps and compressing the conditioned biomass feedstock into a thermally managed compaction device comprising at least one modified die. The modified die allows for differential cooling/heating modifications so as to control the temperature near the entrance to the compaction device and passing the formed torrefied biomass into a post-formation curing zone.

Abstract: A manufacturing process is disclosed for preparing torrefied biomass having a reduced inorganic content which comprises passing crude torrefied biomass through one or more selective separation devices capable of separating inorganic particulate matter from the torrefied biomass.

Abstract: Disclosed herein is a binder-free product and process for making the product. The product is a mechanically stable, water resistant torrefied biomass product that does not comprise an extrinsic binder additive. The product is made using a combination of appropriate pre-treatment steps and compressing the conditioned biomass feedstock into a thermally managed compaction device comprising at least one modified die. The modified die allows for differential cooling/heating modifications so as to control the temperature near the entrance to the compaction device and passing the formed torrefied biomass into a post-formation curing zone.

Abstract: A manufacturing process is disclosed for preparing torrefied biomass having a reduced inorganic content which comprises passing crude torrefied biomass through one or more selective separation devices capable of separating inorganic particulate matter from the torrefied biomass.

Abstract: The present invention provides a relevant relationships based networking environment for establishing member networks focusing on different aspects, of a members life based on generally vetted connections with other members. A member initiates the formation of one or more aspect of life related networks, such as social, business or a particular interests aspect related networks, by inviting other members to connect through primary relationship connections and the other members accepting the invitations. Based on the primary relationship connections the networking environment automatically adds secondary relationship connection members to the aspect related network. Primary relationship connections require prior agreement by both members to the connection, such connections provide for both communication and information sharing.

Abstract: The invention relates to reactor apparatus (1) comprising an assembly of a plurality of separate conduits (2) disposed within a vessel (3) for heat exchange between the conduits (2) and a medium (not shown) in the vessel (3), the separate conduits (2) being connectible to define one or more flow paths through the reactor (1), the length of the or each flow path being variable by adjusting the number of conduits connected such that the residence tine of reactants flowing in the or each flow path can be varied, and a mixing inlet (100) for mixing fluids comprising a conduit (200) adapted to be inserted into a fluid flow device (300) and means (400) disposed about the outer surface (700) of the conduit (200) to create turbulence in fluid in the device (300), there being at least one aperture (600) in the conduit (200) for addition and an additive, the turbulence causing mixing of the additive into the fluid show. Such a mixing inlet (100) can be used with reactor apparatus as described above.

Abstract: An animal trap has an elongated base member; a pair of opposed trap jaws are disposed longitudinally of the base member and pivotally connected at their end portions to corresponding end portions of the base member for relative pivotal movement; a spring member is secured to the base member and operable to pivot the jaws from an open position to a closed position where they will entrap an animal; a jaw release member pivotally is secured at one end to an end portion of the base member for movement from a substantially vertical position wherein it engages and holds the jaws open, to an outwardly extending position where it leaves the jaws free to close, the member has protrusions thereon which engage and hold the jaws open until the release member is struck by the head of an animal so as to cause the release member to pivot outwardly away from the jaws thus releasing the jaws to capture the animal therebetween.