Abstract: In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer. An edge bevel removal embodiment involving that is particularly effective at obviating streaking, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

Abstract: An electrochemical reactor is used to electrofill damascene architecture for integrated circuits or for electropolishing magnetic disks. An inflatable bladder is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The bladder establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

Abstract: A gate valve sealing unit includes first and second annular seal members that are attached to a main body structure within a passageway that receives and is selectively occluded by a gate. The first and second seal members include first and second rigid mounting hubs to which are mounted first and second annular elastomer sleeves, respectively. Each elastomer sleeve has a continuous lip section and plural axially spaced cavities, the lip sections of the first and second sleeves engaging peripheral margins on opposite sides of the gate when it occludes the passageway and engaging each other otherwise. The first and second mounting hubs include axially outward radial flanges that extend from the respective first and second sides of the main body structure.

Abstract: A gate valve sealing unit includes first and second annular seal members that are attached to a main body structure within a passageway that receives and is selectively occluded by a gate. The first and second seal members include first and second rigid mounting hubs to which are mounted first and second annular elastomer sleeves, respectively. Each elastomer sleeve has a continuous lip section and plural axially spaced cavities, the lip sections of the first and second sleeves engaging peripheral margins on opposite sides of the gate when it occludes the passageway and engaging each other otherwise. The first and second mounting hubs include axially outward radial flanges that extend from the respective first and second sides of the main body structure.