Patents by Inventor Andrew J. McKerrow
Andrew J. McKerrow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10043655Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: February 7, 2017Date of Patent: August 7, 2018Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Publication number: 20170148628Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: February 7, 2017Publication date: May 25, 2017Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Patent number: 9570274Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: January 28, 2015Date of Patent: February 14, 2017Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Publication number: 20150206719Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: January 28, 2015Publication date: July 23, 2015Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Patent number: 8999859Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: December 18, 2013Date of Patent: April 7, 2015Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart K. van Schravendijk, Andrew J. McKerrow
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Publication number: 20140216337Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: December 18, 2013Publication date: August 7, 2014Applicant: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart K. van Schravendijk, Andrew J. McKerrow
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Patent number: 8637411Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: September 23, 2011Date of Patent: January 28, 2014Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart J. van Schravendijk, Andrew J. McKerrow
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Publication number: 20120028454Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: September 23, 2011Publication date: February 2, 2012Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart J. van Schravendijk, Andrew J. McKerrow
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Patent number: 7087518Abstract: One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.Type: GrantFiled: May 15, 2003Date of Patent: August 8, 2006Assignee: Texas Instruments IncorporatedInventors: David Gerald Farber, William Wesley Dostalik, Robert Kraft, Andrew J. McKerrow, Kenneth Joseph Newton, Ting Tsui
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Patent number: 6861348Abstract: A low-k dielectric layer (104) is treated with a dry-wet (D-W) or dry-wet-dry (D-W-D) process to improve patterning Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The D-W or D-W-D treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).Type: GrantFiled: October 18, 2001Date of Patent: March 1, 2005Assignee: Texas Instruments IncorporatedInventors: Brian K. Kirkpatrick, Michael Morrison, Andrew J. McKerrow, Kenneth J. Newton, Dirk N. Anderson
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Patent number: 6838300Abstract: A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (40), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer (40).Type: GrantFiled: February 4, 2003Date of Patent: January 4, 2005Assignee: Texas Instruments IncorporatedInventors: Changming Jin, Phillip D. Matz, Heungsoo Park, Patricia B. Smith, Andrew J. McKerrow
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Patent number: 6831008Abstract: A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel suicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.Type: GrantFiled: September 30, 2002Date of Patent: December 14, 2004Assignee: Texas Instruments IncorporatedInventors: Jiong-Ping Lu, Glenn J. Tessmer, Melissa M. Hewson, Donald S. Miles, Ralf B. Willecke, Andrew J. McKerrow, Brian K. Kirkpatrick, Clinton L. Montgomery
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Publication number: 20040150012Abstract: A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (40), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer (40).Type: ApplicationFiled: February 4, 2003Publication date: August 5, 2004Applicant: Texas Instruments IncorporatedInventors: Changming Jin, Phillip D. Matz, Heungsoo Park, Patricia B. Smith, Andrew J. McKerrow
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Publication number: 20040152296Abstract: A method of forming an organosilicate low dielectric constant insulating layer (40) in an integrated circuit, and an integrated circuit structure having such a low-k insulating layer (40), are disclosed. In the case where the low-k dielectric material of the insulating layer (40) comprises an organosilicate glass, subsequent plasma processing has been observed to break bonds between silicon and organic moieties, either by replacing an organic group with a hydroxyl group or with hydrogen, or by leaving a dangling bond. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a silylation agent such as hexamethyldisilazane, which reacts with the damaged molecules, and forms molecules that restore the properties of the film.Type: ApplicationFiled: February 4, 2003Publication date: August 5, 2004Applicant: Texas Instruments IncorporatedInventors: Phillip D. Matz, Patricia B. Smith, Heungsoo Park, Changming Jin, Andrew J. McKerrow
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Patent number: 6720247Abstract: A low-k dielectric layer (104) is treated with a dry H2 plasma pretreatment to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The H2 plasma pre-treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).Type: GrantFiled: October 25, 2001Date of Patent: April 13, 2004Assignee: Texas Instruments IncorporatedInventors: Brian K. Kirkpatrick, Michael Morrison, Andrew J. McKerrow, Kenneth J. Newton, Dirk N. Anderson
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Publication number: 20040061184Abstract: A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel suicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.Type: ApplicationFiled: September 30, 2002Publication date: April 1, 2004Inventors: Jiong-Ping Lu, Glenn J. Tessmer, Melissa M. Hewson, Donald S. Miles, Ralf B. Willecke, Andrew J. McKerrow, Brian K. Kirkpatrick, Clinton L. Montgomery
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Publication number: 20030224585Abstract: One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.Type: ApplicationFiled: May 15, 2003Publication date: December 4, 2003Inventors: David Gerald Farber, William Wesley Dostalik, Robert Kraft, Andrew J. McKerrow, Kenneth Joseph Newton, Ting Tsui
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Patent number: 6620560Abstract: Plasma treating a low-k dielectric layer (104) using an oxidation reaction (e.g., O2) to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The plasma treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130, 132), during a rework of the pattern (130, 132), or between via and trench patterning to reduce resist poisoning.Type: GrantFiled: October 11, 2001Date of Patent: September 16, 2003Assignee: Texax Instruments IncorporatedInventors: Ping Jiang, Guoqiang Xing, Andrew J. McKerrow, Robert Kraft, Hyesook Hong
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Publication number: 20030170992Abstract: One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.Type: ApplicationFiled: March 8, 2002Publication date: September 11, 2003Inventors: David Gerald Farber, William Wesley Dostalik, Robert Kraft, Andrew J. McKerrow, Kenneth Joseph Newton, Ting Tsui
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Publication number: 20020111037Abstract: A low-k dielectric layer (104) is treated with a dry-wet (D-W) or dry-wet-dry (D-W-D) process to improve patterning Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The D-W or D-W-D treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).Type: ApplicationFiled: October 18, 2001Publication date: August 15, 2002Inventors: Brian K. Kirkpatrick, Michael Morrison, Andrew J. McKerrow, Kenneth J. Newton, Dirk N. Anderson