Abstract: The present disclosure provides a photovoltaic device formed according to a color code scheme and methods of manufacturing thereof. In an example, the photovoltaic device may include one or more photovoltaic cells formed according to one or more applications of the photovoltaic cells. The photovoltaic device may also include a rear contact layer formed on a rear surface of the one or more photovoltaic cells, the rear contact layer including one or both of a composition or a thickness configured to produce a unique color code in the color code scheme that is visible in areas of the photovoltaic device outside of areas covered by the photovoltaic cells and corresponding to the particular product configuration of the photovoltaic device. The photovoltaic device may also include a back reflector formed on a rear surface of the rear contact layer.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: Aspects of the disclosure relate to surface passivation, and more particularly, surface passivation of optoelectronic devices made of Group III-V semiconductors. In one implementation, a method for passivating an optoelectronic device is described that includes providing a window layer of the optoelectronic device; and depositing a window passivation layer over a surface of the window layer. In another implementation, an optoelectronic device is described that includes a window layer disposed over an absorber layer; and a window passivation layer disposed over a surface of the window layer. In other implementations, a method and an optoelectronic device are based on providing a window layer of the optoelectronic device; and providing a window passivation layer of the optoelectronic device, wherein the window passivation layer is adjacent to the window layer.

Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.