Abstract: Example medical systems useful in performing treatment under magnetic resonance imaging and related devices, kits, and methods are described. An example medical system includes a first medical device and a second medical device. The first medical device has a first passive marker. The first passive marker is formed of a first material that has a first magnetic susceptibility. The second medical device has a second passive marker. The second passive marker is formed of a second material that has a second magnetic susceptibility. The second passive marker creates an image artifact under MRI. The image artifact created by the second passive marker is altered under MRI when the first passive marker overlaps the second passive marker.

Abstract: A method for accessing a memory cell includes enabling precharging of a bit line of the memory cell before a next access of the memory cell. The method includes disabling the precharging after a first interval if the next access is a write. The method includes disabling the precharging after a second interval if the next access is a read. The first interval is shorter than the second interval.

Abstract: Example medical systems for performing treatment under magnetic resonance imaging and related devices, kits, and methods are described. An example medical system includes a first medical device, a second medical device, and a marker. The first medical device is formed of a first material. The first material has a first magnetic susceptibility. The second medical device is formed of a second material. The second material has a second magnetic susceptibility. The marker is disposed on the second medical device and is formed of a third material. The third material has a third magnetic susceptibility that is different than the first magnetic susceptibility and the second magnetic susceptibility.

Abstract: A method for accessing a memory cell includes enabling precharging of a bit line of the memory cell before a next access of the memory cell. The method includes disabling the precharging after a first interval if the next access is a write. The method includes disabling the precharging after a second interval if the next access is a read. The first interval is shorter than the second interval.

Abstract: Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.

Abstract: Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.

Abstract: Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.