Patents by Inventor Andrew J. Tang

Andrew J. Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11941160
    Abstract: A method includes transmitting an instruction to a motive power supply of an elastically deformable device to drive the elastically deformable device in accordance with a drive setting; measuring a force exerted on the elastically deformable device with a sensor; outputting an observed value representative of the force; comparing the observed value with a reference value corresponding with a predetermined force to be exerted on the elastically deformable device; and adjusting the drive setting based on a determination that the observed value is outside of a predetermined range of the reference value. The method prevents slack in the elastically deformable device over time. Related apparatuses, systems, techniques and articles are also described.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: March 26, 2024
    Assignee: Baker Hughes Oilfield Operations LLC
    Inventors: Andrew Lee Tang, Bryan Christopher Morris, James J. Delmonico
  • Patent number: 6638797
    Abstract: The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1-xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
    Type: Grant
    Filed: September 3, 2002
    Date of Patent: October 28, 2003
    Assignees: Sony Corporation, Massachusetts Institute of Technology
    Inventors: Takashi Noguchi, Rafael Reif, Julie Tsai, Andrew J. Tang
  • Publication number: 20030071307
    Abstract: The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1−xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1−xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
    Type: Application
    Filed: September 3, 2002
    Publication date: April 17, 2003
    Inventors: Takashi Noguchi, Rafael Reif, Julie Tsai, Andrew J. Tang
  • Patent number: 6444509
    Abstract: The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1−xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1−xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: September 3, 2002
    Assignees: Sony Corporation, Massachusetts Institute of Technology
    Inventors: Takashi Noguchi, Rafael Reif, Julie Tsai, Andrew J. Tang
  • Patent number: 5828084
    Abstract: The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si.sub.1 -.sub.x Ge.sub.x alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si.sub.1-x Ge.sub.x alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
    Type: Grant
    Filed: March 27, 1995
    Date of Patent: October 27, 1998
    Assignees: Sony Corporation, Massachusetts Institute of Technology
    Inventors: Takashi Noguchi, Rafael Reif, Julie Tsai, Andrew J. Tang