Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: The invention provides allelic ladder mixtures and individual alleles suitable for use in such mixtures. The allelic ladder mixtures give improved identification and distinguishing capabilities, particularly suitable in forensic investigations.

Abstract: Growth-orientation of a crystal on a semiconductor device is achieved by using an oriented seed layer to grow a monocrystalline layer of silicon on an oxide. The oriented seed layer is provided by a regimented layer of silicon precipitates, which are deposited onto a surface of the oxide in a conventional aluminum-silicon deposition process. A film of silicon is deposited onto the oriented seed layer to grow a monocrystalline layer of silicon. The monocrystalline layer of silicon is further coated with an oxide, and a further seed layer is deposited. In this manner, a plurality of monocrystalline layers of silicon can be deposited on and between insulating layers of oxide. The method can be used for the manufacture of silicon-on-oxide transistors, having a low density of crystalline defects.

Abstract: A process is disclosed for the formation of an LDD structure in an MOS transistor having a reduced mask count and providing high integrity source/drain junctions. In accordance with one embodiment of the invention an MOS transistor is formed having a gate dielectric overlying an active region of the substrate. A transistor gate is formed in a central portion of the active region and an oxidation layer is formed over the active region and the transistor gate. A lightly-doped source/drain region is formed which is self aligned to the transistor gate. A conformal layer of an oxygen reactive material is formed overlying the transistor gate and the active region. The oxygen reactive material is anisotropically etched in a oxygen plasma reactive ion etch to form a sidewall spacer on the edge the transistor gate. The oxygen reactive ion etch does not penetrate the oxidation layer overlying the active region. A heavily-doped source/drain region is formed which is self aligned to the edge of the sidewall spacer.