Patents by Inventor Andrew John Simon

Andrew John Simon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130068253
    Abstract: A system and method for heating a purging fluid contained in a portable oil sump or reservoir, and pumping the hot purging fluid through a bearing housing in order to purge the bearing and bearing housing of accumulated hardened grease, sludge, and debris. The heated purging fluid can then be suctioned into the sump or reservoir, screened and filtered, and re-circulated through bearing housing to continue purging the bearing and bearing housing.
    Type: Application
    Filed: September 20, 2011
    Publication date: March 21, 2013
    Applicant: Inventus Holdings, LLC
    Inventors: Miguel A. Gonzalez, Daniel M. Brake, Gregory John Smith, Andrew John Simon
  • Publication number: 20020096688
    Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).
    Type: Application
    Filed: January 22, 2002
    Publication date: July 25, 2002
    Applicant: The Secretary of State for Defence in Her Britannic Majesty's Government
    Inventors: Leigh Trevor Canham, Timothy Ingram Cox, Armando Loni, Andrew John Simons, Richard Simon Blacker
  • Patent number: 6380550
    Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).
    Type: Grant
    Filed: September 17, 1997
    Date of Patent: April 30, 2002
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Goverment of the United Kingdom of Great Britain and Northern Ireland
    Inventors: Leigh Trevor Canham, Timothy Ingram Cox, Armando Loni, Andrew John Simons, Richard Simon Blacker