Abstract: A shuttered electrical connector for receiving an electrical plug, the plug having a hinged tail for lockingly engaging with the connector, is disclosed. The connector includes: a body 20 defining a socket having 22 an open mouth 24; a central shutter 30 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a first hinge axis 32; and a pair of spaced apart side shutters 40 & 50 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a second hinge axis 42, the second hinge axis 42 parallel to and spaced apart from the first hinge axis 32. The shutters are rotatable through approximately 90 degrees from: a closed position in which together they cover the open mouth 24 while presenting a substantially flat outer face, to an open position receiving the plug in which the central shutter is offset from the side shutters.

Abstract: A shuttered electrical connector for receiving an electrical plug, the plug having a hinged tail for lockingly engaging with the connector, is disclosed. The connector includes: a body 20 defining a socket having 22 an open mouth 24; a central shutter 30 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a first hinge axis 32; and a pair of spaced apart side shutters 40 & 50 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a second hinge axis 42, the second hinge axis 42 parallel to and spaced apart from the first hinge axis 32. The shutters are rotatable through approximately 90 degrees from: a closed position in which together they cover the open mouth 24 while presenting a substantially flat outer face, to an open position receiving the plug in which the central shutter is offset from the side shutters.

Abstract: A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

Abstract: A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

Abstract: A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.