Patents by Inventor Andrew Kretzschmar

Andrew Kretzschmar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE AND RELATED SEMICONDUCTOR STRUCTURES
    Publication number: 20210134588
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1?xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1?xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1?xGex) seed layer are also disclosed.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Methods for forming a semiconductor structure and related semiconductor structures
    Patent number: 10923344
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: February 16, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE AND RELATED SEMICONDUCTOR STRUCTURES
    Publication number: 20190131124
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar