Abstract: A thermal enclosure for a computer having a processor and a display is disclosed and may include an inner case. The thermal enclosure may further include a heat sink attached to the inner case and thermally connected to the processor. The heat sink may have an outer heat dissipation channel. The thermal enclosure may also include an outer housing that at least partially the envelops the inner case. The outer housing may have a rear housing portion and a front housing portion. The rear housing portion, the front housing portion, and the outer heat dissipation channel may define a heat dissipation opening that may have an overall width, W, and an overall depth, D, the outer heat dissipation channel may be recessed within the heat dissipation opening and W and D may be adapted to prevent a human finger from coming into contact with the outer heat dissipation channel.

Abstract: A monitor mount is configured to detachably secure a first monitor and/or a second monitor individually or concurrently. The first monitor is further configured to be detachably secured to the second monitor independently from either monitor being secured to the monitor mount. The second monitor includes a mounting area in which the first monitor is mounted, and the first monitor and the second monitor are configured such that the first monitor is interchangeably insertable into the mounting area from a first lateral direction and a second lateral direction that is opposite to the first lateral direction. Accordingly, the second monitor includes a dual-entry feature that enables the first monitor to be inserted from either lateral side of the second monitor.

Abstract: Generally, a cyclic sorptive gas separation process can comprise a feed or sorbing step followed by a regenerating step. In embodiments, the sorbing step can involve admitting said feed stream into a contactor, sorbing at least a portion of a first component onto a sorbent, producing a first product stream, and recovering a first product stream. In embodiments, the regenerating step can comprise admitting or feeding the first regeneration stream into the contactor, sorbing a fraction of a third component onto the contactor, desorbing a fraction of the first component, and recovering a second product stream from the contactor, wherein the regeneration step further comprises controlling a partial pressure of the third component to a partial pressure threshold equal to or greater than 0.4 Bara.

Abstract: A computer-implemented method for performing data management in a plasma processing system is provided. The method includes providing a recipe-and component control module (RACCM). The RACCM is a server that includes a plurality of intelligent agents, which are configured to interact with the plurality of components. The RACCM also includes a coordinating agent, which is configured to receive processed data from the plurality of intelligent agents. The RACCM further includes a set of provisional agents, which is configured to perform recipe management by distributing at least part of a recipe to at least one of the plurality of intelligent agents and the coordinating agent.

Abstract: A computer-implemented method for performing data management in a plasma processing system is provided. The method includes providing a recipe-and component control module (RACCM). The RACCM is a server that includes a plurality of intelligent agents, which are configured to interact with the plurality of components. The RACCM also includes a coordinating agent, which is configured to receive processed data from the plurality of intelligent agents. The RACCM further includes a set of provisional agents, which is configured to perform recipe management by distributing at least part of a recipe to at least one of the plurality of intelligent agents and the coordinating agent.

Abstract: A recipe-and component control module (RACCM) is provided. The RACCM is a server for performing data management in a plasma processing system with a plurality of components. The RACCM includes a plurality of intelligent agents. Each intelligent agent of the intelligent agents is configured to interact with each component of the plurality of components. The RACCM also includes a coordinating agent, which is configured to receive processed data from the plurality of intelligent agents.

Abstract: A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Abstract: A recipe-and component control module (RACCM) is provided. The RACCM is a server for performing data management in a plasma processing system with a plurality of components. The RACCM includes a plurality of intelligent agents. Each intelligent agent of the intelligent agents is configured to interact with each component of the plurality of components. The RACCM also includes a coordinating agent, which is configured to receive processed data from the plurality of intelligent agents.

Abstract: A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors to be hot swappable plug and play sensors. The computer system exchanges various messages with the sensors, synchronizes with the sensors, and integrates and utilizes data sent from the sensors.

Abstract: A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength.

Abstract: A plasma processing system is provided. The plasma processing system includes a processing chamber having a gas inlet for introducing cleaning gases. The cleaning gas is optimized to remove byproducts deposited on inner surfaces of the processing chamber. The processing chamber includes a top electrode for creating a plasma from the cleaning gas to perform the cleaning process. A variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases is included. The variable conductance meter is positioned on an outlet of the chamber. An optical emission spectrometer (OES) for detecting an endpoint of the cleaning process performed in the processing chamber is included. The OES is located to detect an emission intensity in the processing chamber from the plasma. The OES is configured to trace the emission intensity. A pumping system for evacuating the processing chamber between processing operations is included.

Abstract: A method for determining an endpoint of an in-situ cleaning process of a semiconductor processing chamber is provided. The method initiates with providing an optical emission spectrometer (OES) configured to monitor selected wavelength signals. Then, baseline OES threshold signal intensities are determined for each of the selected wavelength signals. Next, an endpoint time of each step of the in-situ cleaning process is determined. Determining an endpoint time includes executing a process recipe to process a semiconductor substrate within the processing chamber. Executing the in-situ cleaning process and recording the endpoint time for each step of the in-situ cleaning process are also included in determining the endpoint time. Then, nominal operating times are established for each step of the in-situ cleaning process. A plasma processing system for executing a two step in-situ cleaning process is also provided.

Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.