Patents by Inventor Andrew M. Hoff

Andrew M. Hoff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11911611
    Abstract: The present invention provides a system and method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. The result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize the electrical treatment for a particular target cell or cellular tissue.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: February 27, 2024
    Assignee: University of South Florida
    Inventors: Mark Jeffrey Jaroszeski, Timothy Fawcett, Richard Jason Connolly, Andrew M. Hoff, Reginald Morley Atkins, Douglas Walter Brown, Richard A. Gilbert
  • Publication number: 20220266006
    Abstract: The present invention provides a system and method for measuring the impedance of one more target cells before and after an electroporation protocol has been applied to the cells. The result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize the electrical treatment for a particular target cell or cellular tissue.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 25, 2022
    Inventors: Mark Jeffrey Jaroszeski, Timothy Fawcett, Richard Jason Connolly, Andrew M. Hoff, Reginald Morley Atkins, Douglas Walter Brown, Richard A. Gilbert
  • Patent number: 11318304
    Abstract: The present invention provides a system and a method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. A result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize an electrical treatment for a particular target cell or cellular tissue.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: May 3, 2022
    Assignee: University of South Florida
    Inventors: Mark Jeffrey Jaroszeski, Timothy Fawcett, Richard Jason Connolly, Andrew M. Hoff, Reginald Morley Atkins, Douglas Walter Brown, Richard A. Gilbert
  • Patent number: 9981126
    Abstract: A system and method for preventing the undesirable dissipation of charge throughout a tissue surface while maintaining the charge density at a desired tissue treatment site. The invention embodies a physical perimeter conductor positioned in proximity to a tissue surface and a conductance control circuit working in combination to collect surface charge applied within the confines of the perimeter conductor and to maintain a desired relationship between the contained surface charge density and time.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: May 29, 2018
    Assignee: University of South Florida
    Inventors: Andrew M. Hoff, Mark J. Jaroszeski, Richard A. Gilbert
  • Patent number: 8455228
    Abstract: A method for facilitating a delivery of a molecule into an interior space of a cell includes the steps of introducing a molecule into a biological structure comprising a cell and applying a substantially continuous low-level electric field, in the form of non-thermal plasma (ionized gas) generated by a direct current voltage applied to an electrode, to the molecule and biological structure. The field is applied for a duration sufficient to effect a change in porosity the cell of the biological structure sufficient to facilitate an entry of a desired molecule into an interior thereof.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: June 4, 2013
    Assignee: University of South Florida
    Inventors: Mark Jaroszeski, Gabriel A. Lopez-Diaz, Richard J. Connolly, Andrew M. Hoff
  • Patent number: 8348942
    Abstract: A device and method to cause hair loss or prevent or inhibit hair growth. The invention uses plasma (ionized gas) that is generated by flowing gas in close proximity to an electrode that has a high potential applied to it. The result is a stream of charged gas particles that are directed to the skin that contains hair. The flowing stream of gas is held above the surface of the skin. Additionally, a grounded conductive material is affixed to the skin to dissipate any charge buildup on the skin and focus the plasma.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: January 8, 2013
    Assignee: University of South Florida
    Inventors: Mark J. Jaroszeski, Gabriel A. Lopez-Diaz, Richard J. Connolly, Andrew M. Hoff
  • Patent number: 8235966
    Abstract: The present invention is a method for electromanipulation of chemical species in vivo relative to a target tissue utilizing a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: August 7, 2012
    Assignee: University of South Florida
    Inventors: Andrew M. Hoff, Richard Gilbert, Richard Heller, Mark J. Jaroszeski
  • Patent number: 7769440
    Abstract: The present invention is a device for electromanipulation of chemical species in vivo relative to a target tissue including a nonconductive, conformable array base adapted to be placed coincident to the target tissue, a plurality of electrode elements projecting from the array base towards the target tissue, the electrode elements addressable individually, an electrical source coupled to the plurality of electrodes, a control means interposed between the electrical source and the plurality of electrode elements and in circuit communication therein, the control means adapted to establish an electrical potential between at least two electrodes, and a delivery means adapted to introduce chemical species to the target tissue.
    Type: Grant
    Filed: September 10, 2003
    Date of Patent: August 3, 2010
    Assignee: University of South Florida
    Inventors: Andrew M. Hoff, Richard Gilbert, Richard Heller, Mark J. Jaroszeski
  • Publication number: 20090004717
    Abstract: A method for facilitating a delivery of a molecule into an interior space of a cell includes the steps of introducing a molecule into a biological structure comprising a cell and applying a substantially continuous low-level electric field, in the form of non-thermal plasma (ionized gas) generated by a direct current voltage applied to an electrode, to the molecule and biological structure. The field is applied for a duration sufficient to effect a change in porosity the cell of the biological structure sufficient to facilitate an entry of a desired molecule into an interior thereof.
    Type: Application
    Filed: September 10, 2008
    Publication date: January 1, 2009
    Applicant: UNIVERSITY OF SOUTH FLORIDA
    Inventors: Mark Jaroszeski, Gabriel A. Lopez-Diaz, Richard J. Connolly, Andrew M. Hoff
  • Patent number: 6967176
    Abstract: Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600° C. to 1,200° C., and at a pressure less than 50 torr.
    Type: Grant
    Filed: October 13, 2003
    Date of Patent: November 22, 2005
    Assignee: University of South Florida
    Inventor: Andrew M. Hoff
  • Patent number: 5773989
    Abstract: A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.
    Type: Grant
    Filed: July 14, 1995
    Date of Patent: June 30, 1998
    Assignees: University of South Florida, Semiconductor Diagnostics, Inc.
    Inventors: Piotr Edelman, Andrew M. Hoff, Lubek Jastrzebski, Jacek Lagowski
  • Patent number: 4776923
    Abstract: In semiconductor treatment apparatus with a plasma generating zone, a treatment zone, and a bent path connecting the two so as to block direct transmission of ultraviolet light from the plasma generating zone to the workpiece in the treatment zone, a light trap is provided to suppress indirect transmission of light as by reflection or by transmission within transparent walls of a conduit defining the bent path.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: October 11, 1988
    Assignee: Machine Technology, Inc.
    Inventors: John E. Spencer, Scott S. Miller, Woodie J. Sutton, Andrew M. Hoff
  • Patent number: 4673456
    Abstract: A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.
    Type: Grant
    Filed: September 17, 1985
    Date of Patent: June 16, 1987
    Assignee: Machine Technology, Inc.
    Inventors: John E. Spencer, Richard A. Borel, Kenneth E. Linxwiler, Andrew M. Hoff