Patents by Inventor Andrew Mark Warwick

Andrew Mark Warwick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Over-temperature protected triac and protection method
    Patent number: 8630074
    Abstract: A triac circuit comprises a triac having first and second main terminals (MT1,MT2) and a gate terminal and a thyristor connected between one of the main terminals (MT1,MT2) and a control terminal of the triac circuit. The thyristor is used to prevent turn on of the triac when it has turned on by temperature induced leakage currents.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: January 14, 2014
    Assignee: NXP, B.V.
    Inventors: Nicholas John Ham, Ed Huang, Jianfeng Zhang, Andrew Mark Warwick, Andrew Butler, Minghaoi Jin
  • OVER-TEMPERATURE PROTECTED TRIAC AND PROTECTION METHOD
    Publication number: 20120250200
    Abstract: A triac circuit comprises a triac having first and second main terminals (MT1,MT2) and a gate terminal and a thyristor connected between one of the main terminals (MT1,MT2) and a control terminal of the triac circuit. The thyristor is used to prevent turn on of the triac when it has turned on by temperature induced leakage currents.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Applicant: NXP B.V.
    Inventors: Nick Ham, Ed Huang, Jianfeng Zhang, Andrew Mark Warwick, Andrew Butler, Minghao Jin
  • Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
    Patent number: 6313489
    Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: November 6, 2001
    Assignee: Philips Electronics North America Corporation
    Inventors: Theodore Letavic, Mark Simpson, Richard Egloff, Andrew Mark Warwick