Abstract: A pharmaceutical dosage system includes a blister pack and a plurality of dosage forms contained by the blister pack. The dosage forms are to be consumed in an up-titration process. Only one single dosage form of the plurality of dosage forms is consumed on a given day throughout the up-titration process whereby dosages increase over the course of a multi-day period of time.

Abstract: A steering assembly has a yoke and an axially compliant intermediate shaft having an elastomeric coupling fitted concentrically to the yoke for rotation about an axis. Preferably, a rigid sleeve of the shaft has a cylindrical portion that fixes concentrically to an end portion of a shaft element that extends longitudinally along the axis. Two diametrically opposite tabs of the sleeve project radially outward from the cylindrical portion. A resiliently flexible isolator is preferably molded to the sleeve and circumferentially covers the tabs and the cylindrical portion. The isolator preferably has two diametrically opposite ears located circumferentially between two diametrically opposite cover segments that substantially cover the tabs. The tabs generally prevent rotation of the shaft with respect to the yoke in case of isolator failure due to the excessive torque. Each ear preferably has a lobe that projects axially beyond the sleeve for enhancing axial compliancy of the intermediate shaft.

Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Abstract: A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.

Abstract: Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.