Abstract: A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Abstract: A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

Abstract: A blade assembly for a mechanical wafer handling system. The assembly includes an elongated planar member having a central region, wherein the central region has a first array of openings and a second array of openings, the openings of the first array being arranged substantially symmetrically to the openings of the second array on opposing sides of a central longitudinal axis extending along the length of the planar member and passing through a center point of the central region. The openings in the first array are arranged substantially symmetrically with respect to a perpendicular axis extending along the width of the elongated planar member and passing through a center point of the central region. The openings in the second array are also arranged substantially symmetrically with respect to the perpendicular axis. The assembly also includes a wrist with a wrist upper cap and a wrist lower cap.