Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: An apparatus for coupling a plurality of surface mounted semiconductor device packages to a circuit board is provided. Each package including a semiconductor device die and a metal clip including a flat web portion having a bottom surface and at least one peripheral rim portion extending from an edge of said flat web portion, said bottom surface having solderable planar metal electrodes or pads on its bottom surface, the contact pads being formed in plurality of layouts having one or more columns and one or more rows. The apparatus including a circuit board contact pattern including one or more columns and one or more rows of contacts, a number of rows being equal to a largest number of contact pad rows in the plurality of contact pad layouts, a number of columns being equal to a largest number of contact pad columns in the plurality of contact pad layouts. The circuit board contact pattern is usable by all of the plurality of the contact pad layouts of the plurality of semiconductor device packages.

Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: A circuit board includes at least one trace having at least one heat spreader disposed thereon, the heater spreader being formed of a solidified paste, such as a paste that includes a mixture of binder particles and filler particles, or a solder paste. As an example, the heater spreader may be configured to increase a cross-sectional area of a portion of the trace, thereby improving heat flow along that portion of the trace. Alternatively, the heater spreader may be configured to increase the surface area of the trace, thereby increasing heat dissipation from the circuit board. As another example, the heat spreader may be disposed between the trace and a semiconductor device and thereby function as a heat sink for the device.

Abstract: A semiconductor package according to the present invention includes a metal can which receives in its interior space a MOSFET. The MOSFET so received is oriented such that its drain electrode is facing the bottom of the can and is electrically connected to the same by a layer of conductive epoxy or a solder or the like. The edges of the MOSFET so placed are spaced from the walls of the can. The space between the edges of the MOSFET and the walls of the can is filled with an insulating layer. A surface of the MOSFET is sub-flush below the plane of a substrate by 0.001-0.005 inches to reduce temperature cycling failures.

Abstract: A semiconductor package according to the present invention includes a metal can which receives in its interior space a MOSFET. The MOSFET so received is oriented such that its drain electrode is facing the bottom of the can and is electrically connected to the same by a layer of conductive epoxy or a solder or the like. The edges of the MOSFET so placed are spaced from the walls of the can. The space between the edges of the MOSFET and the walls of the can is filled with an insulating layer. A surface of the MOSFET is sub-flush below the plane of a substrate by 0.001-0.005 inches to reduce temperature cycling failures.