Abstract: A composite scaffold having a highly porous interior with increased surface area and void volume is surrounded by a flexible support structure that substantially maintains its three-dimensional shape under tension and provides mechanical reinforcement during repair or reconstruction of soft tissue while simultaneously facilitating regeneration of functional tissue.

Abstract: The present disclosure provides for a modular design and build architecture, comprising: one or more integrated system module (ISMs) that are configured to be shipped and assembled on-site to construct an operational infrastructure for one or more application environments, wherein each of the ISMs comprises two or more different functional components that are integrated onto and/or supported by a common structural floor.

Abstract: An attachment bracket for mounting a fender of a vehicle to a side structural member includes a top portion that connects to the fender. A first vertical leg connects to the side structural member. The first vertical leg extends downwardly from an edge of the top portion. A second vertical leg connects to the side structural member. The second vertical leg extends downwardly from an opposite edge of the top portion. The first vertical leg includes a bend separating the first vertical leg into an upper portion and a lower portion. The first vertical leg has a central opening at the bend that is spaced vertically from the top portion and a bottom end of the first vertical leg.

Abstract: In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.

Abstract: An attachment bracket for mounting a fender of a vehicle to a side structural member includes a top portion that connects to the fender. A first vertical leg connects to the side structural member. The first vertical leg extends downwardly from an edge of the top portion. A second vertical leg connects to the side structural member. The second vertical leg extends downwardly from an opposite edge of the top portion. The first vertical leg includes a bend separating the first vertical leg into an upper portion and a lower portion. The first vertical leg has a central opening at the bend that is spaced vertically from the top portion and a bottom end of the first vertical leg.

Abstract: An attachment bracket for mounting a fender of a vehicle to a side structural member includes a top portion that connects to the fender. A first vertical leg connects to the side structural member. The first vertical leg extends downwardly from an edge of the top portion. A second vertical leg connects to the side structural member. The second vertical leg extends downwardly from an opposite edge of the top portion. The first vertical leg includes a bend separating the first vertical leg into an upper portion and a lower portion. The first vertical leg has a central opening at the bend that is spaced vertically from the top portion and a bottom end of the first vertical leg.

Abstract: A windshield support assembly includes a cowl upper that extends in a vehicle widthwise direction and is configured to connect to a windshield, a cowl lower that extends in the vehicle widthwise direction and is configured to connect to the cowl upper, and multiple cowl braces connected to the cowl upper and the cowl lower. The cowl braces are spaced-apart from each other in the vehicle widthwise direction. Each cowl brace includes an upper portion, a lower portion and a continuous body portion connecting the upper portion and the lower portion. At least one of the upper portion and the lower portion includes multiple legs. Each leg is connected to the cowl upper or the cowl lower at spaced-apart locations along the vehicle widthwise direction.

Abstract: In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.

Abstract: In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.

Abstract: A cowl brace for supporting a cowl upper and a cowl lower of a windshield assembly is disclosed. The cowl brace includes an upper portion comprising a plurality of upper legs extending in an upper direction. The plurality of upper legs are spaced-apart from each other in a vehicle widthwise direction for connection to the cowl upper. A lower portion of the cowl brace extends in a lower direction for connection to the cowl lower. A continuous body portion of the cowl brace extends in the vehicle widthwise direction connecting the upper portion and the lower portion.

Abstract: An attachment bracket for mounting a fender of a vehicle to a side structural member includes a top portion that connects to the fender. A first vertical leg connects to the side structural member. The first vertical leg extends downwardly from an edge of the top portion. A second vertical leg connects to the side structural member. The second vertical leg extends downwardly from an opposite edge of the top portion. The first vertical leg includes a bend separating the first vertical leg into an upper portion and a lower portion. The first vertical leg has a central opening at the bend that is spaced vertically from the top portion and a bottom end of the first vertical leg.

Abstract: In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.

Abstract: A method and apparatus are provided an interconnect cladding layer. In one embodiment, a first sacrificial layer is deposited over a substrate and patterned. In the vias created during the patterning operation, a conductive material is placed to create conductive interconnects. After planarizing the conductive material, the sacrificial layer is removed leaving the interconnect exposed. A cladding layer is then deposited over the conductive material.

Abstract: In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

Abstract: The invention relates to a microelectronic device and a structure therein that includes a diffusion barrier layer having a first thickness and a first dielectric constant. An etch stop layer is disposed above and on the diffusion barrier layer. The etch stop layer has a second thickness and a second dielectric constant.

Abstract: Embodiments of the invention provide a device with a hard mask layer between first and second ILD layers. The hard mask layer may have a k value approximately equal to the first and/or second ILD layers.

Abstract: A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.

Abstract: A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.

Abstract: The invention forms a graded modified layer in a substrate by exposing the substrate to hydrogen plasma. Methyl groups may be removed from carbon doped oxide in the substrate by the hydrogen plasma treatment. This may result in a stronger interface between the substrate and an etch stop layer on the substrate.

Abstract: A method for operating a multi-station processing chamber is described. A wafer is loaded onto the first station then indexed to the second station prior to processing. The indexing causes the wafer to be well-seated on it spindle before being processed. This prevents an improperly seated wafer from being processed at the first station.