Patents by Inventor Andrew P. Cowley
Andrew P. Cowley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8053257Abstract: The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multiple modes can be calculated, a best mode that most accurately represents dielectric breakdown for the semiconductor wafer lot is determined. Premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation from the best calculated mode.Type: GrantFiled: April 2, 2008Date of Patent: November 8, 2011Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Hazara S. Rathore, Paul S. McLaughlin, Robert D. Edwards, Lawrence A. Clevenger, Andrew P. Cowley, Chih-Chao Yang, Conrad A. Barile
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Patent number: 7830019Abstract: A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.Type: GrantFiled: April 28, 2009Date of Patent: November 9, 2010Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Lawrence A. Clevenger, Andrew P. Cowley, Jason P. Gill, Baozhen Li, Chih-Chao Yang
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Patent number: 7692439Abstract: A structure representative of a conductive interconnect of a microelectronic element is provided, which may include a conductive metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between the upper and lower surfaces, the upper surface defining a horizontally extending plane. The structure may also include a lower via having a top end in conductive communication with the metallic plate and a bottom end vertically displaced from the top end. A lower conductive or semiconductive element can be in contact with the bottom end of the lower via. An upper metallic via can lie in at least substantial vertical alignment with the lower conductive via, the upper metallic via having a bottom end in conductive communication with the metallic plate and a top end vertically displaced from the bottom end. The upper metallic via may have a width at least about ten times than the length of the metallic plate and about ten times smaller than the width of the metallic plate.Type: GrantFiled: May 22, 2008Date of Patent: April 6, 2010Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Birendra Agarwala, Lawrence A. Clevenger, Andrew P. Cowley, Ronald G. Filippi, Jason P. Gill, Tom C. Lee, Baozhen Li, Paul S. McLaughlin, Du B. Nguyen, Hazara S. Rathore, Timothy D. Sullivan, Chih-Chao Yang
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Patent number: 7639032Abstract: A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (?m).Type: GrantFiled: December 19, 2007Date of Patent: December 29, 2009Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Birendra Agarwala, Lawrence A. Clevenger, Andrew P. Cowley, Ronald G. Filippi, Jason P. Gill, Tom C. Lee, Baozhen Li, Paul S. McLaughlin, Du B. Nguyen, Hazara S. Rathore, Timothy D. Sullivan, Chih-Chao Yang
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Patent number: 7598616Abstract: A structure. The structure includes: a core electrical conductor having a top surface, an opposite bottom surface and sides between the top and bottom surfaces; an electrically conductive liner in direct physical contact with and covering the bottom surface and the sides of the core electrical conductor, embedded portions of the electrically conductive liner in direct physical contact with and extending over the core electrical conductor in regions of the core electrical conductor adjacent to both the top surface and the sides of the core electrical conductor; and an electrically conductive cap in direct physical contact with the top surface of the core electrical conductor that is exposed between the embedded portions of the electrically conductive liner.Type: GrantFiled: June 17, 2008Date of Patent: October 6, 2009Assignee: International Business Machines CorporationInventors: Chih-Chao Yang, Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Meeyoung H. Yoon
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Patent number: 7585764Abstract: A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.Type: GrantFiled: August 9, 2005Date of Patent: September 8, 2009Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Lawrence A. Clevenger, Andrew P. Cowley, Jason P. Gill, Baozhen Li, Chih-Chao Yang
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Publication number: 20090200673Abstract: A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.Type: ApplicationFiled: April 28, 2009Publication date: August 13, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kaushik Chanda, Lawrence A. Clevenger, Andrew P. Cowley, Jason P. Gill, Baozhen Li, Chih-Chao Yang
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Patent number: 7563710Abstract: A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor.Type: GrantFiled: September 25, 2007Date of Patent: July 21, 2009Assignee: International Business Machines CorporationInventors: Chih-Chao Yang, Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Meeyoung H. Yoon
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Patent number: 7528493Abstract: A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.Type: GrantFiled: September 25, 2007Date of Patent: May 5, 2009Assignee: International Business Machines CorporationInventors: Chih-Chao Yang, Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Meeyoung H. Yoon
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Patent number: 7494915Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: GrantFiled: August 9, 2006Date of Patent: February 24, 2009Assignees: International Business Machines Corporation, Infineon Technologies, AGInventors: Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Mark Hoinkis, Steffen K. Kaldor, Erdem Kaltalioglu, Kaushik A. Kumar, Douglas C. La Tulipe, Jr., Jochen Schacht, Andrew H. Simon, Terry A. Spooner, Yun-Yu Wang, Clement H. Wann, Chih-Chao Yang
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Publication number: 20080246151Abstract: A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.Type: ApplicationFiled: June 17, 2008Publication date: October 9, 2008Inventors: Chih-Chao Yang, Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Meeyoung H. Yoon
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Publication number: 20080231312Abstract: A structure representative of a conductive interconnect of a microelectronic element is provided, which may include a conductive metallic plate having an upper surface, a lower surface, and a plurality of peripheral edges extending between the upper and lower surfaces, the upper surface defining a horizontally extending plane. The structure may also include a lower via having a top end in conductive communication with the metallic plate and a bottom end vertically displaced from the top end. A lower conductive or semiconductive element can be in contact with the bottom end of the lower via. An upper metallic via can lie in at least substantial vertical alignment with the lower conductive via, the upper metallic via having a bottom end in conductive communication with the metallic plate and a top end vertically displaced from the bottom end. The upper metallic via may have a width at least about ten times than the length of the metallic plate and about ten times smaller than the width of the metallic plate.Type: ApplicationFiled: May 22, 2008Publication date: September 25, 2008Inventors: Kaushik Chanda, Birendra Agarwala, Lawrence A. Clevenger, Andrew P. Cowley, Ronald G. Filippi, Jason P. Gill, Tom C. Lee, Baozhen Li, Paul S. McLaughlin, Du B. Nguyen, Hazara S. Rathore, Timothy D. Sullivan, Chih-Chao Yang
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Publication number: 20080174334Abstract: The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for the semiconductor wafer. If a one mode is calculated, premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation of a plurality of breakdown voltages within said calculated mode. If multiple modes are calculated, the mode that most accurately represents dielectric breakdown for the semiconductor wafer is determined and premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard of the calculated mode that most accurately represents dielectric breakdown for the semiconductor wafer.Type: ApplicationFiled: April 2, 2008Publication date: July 24, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kaushik Chanda, Hazara S. Rathore, Paul S. McLaughlin, Robert D. Edwards, Lawrence A. Clevenger, Andrew P. Cowley, Chih-Chao Yang, Conrad A. Barile
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Patent number: 7397260Abstract: A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (?m).Type: GrantFiled: November 4, 2005Date of Patent: July 8, 2008Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Birendra Agarwala, Lawrence A. Clevenger, Andrew P. Cowley, Ronald G. Filippi, Jason P. Gill, Tom C. Lee, Baozhen Li, Paul S. McLaughlin, Du B. Nguyen, Hazara S. Rathore, Timothy D. Sullivan, Chih-Chao Yang
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Patent number: 7335588Abstract: A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.Type: GrantFiled: April 15, 2005Date of Patent: February 26, 2008Assignee: International Business Machines CorporationInventors: Chih-Chao Yang, Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Meeyoung H. Yoon
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Patent number: 7122462Abstract: An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.Type: GrantFiled: November 21, 2003Date of Patent: October 17, 2006Assignees: International Business Machines Corporation, Infineon Technologies, AGInventors: Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Mark Hoinkis, Steffen K. Kaldor, Erdem Kaltalioglu, Kaushik A. Kumar, Douglas C. La Tulipe, Jr., Jochen Schacht, Andrew H. Simon, Terry A. Spooner, Yun-Yu Wang, Clement H. Wann, Chih-Chao Yang
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Patent number: 7001835Abstract: A hardmask layer in the back end of an integrated circuit is formed from TaN having a composition of less than 50% Ta and a resistivity greater than 400 ?Ohm-cm, so that it is substantially transparent in the visible and permits visual alignment of upper and lower alignment marks through the hardmask and intervening layer(s) of ILD. A preferred method of formation of the hardmask is by sputter deposition of Ta in an ambient containing N2 and a flow rate such that (N2 flow)/(N2+carrier flow)>0.5.Type: GrantFiled: November 21, 2003Date of Patent: February 21, 2006Assignees: International Business Machines Corporation, Infineon Technologies, AGInventors: Lawrence A. Clevenger, Andrew P. Cowley, Timothy J. Dalton, Mark Hoinkis, Steffen K. Kaldor, Kaushik A. Kumar, Stephen M. Rossnagel, Andrew H. Simon, Douglas C. La Tulipe, Jr.
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Patent number: 6387754Abstract: An on-chip vertically stacked decoupling capacitor includes a hardmask film formed between the capacitor dielectric and the lower electrode. The manufacturing process used to form the capacitor takes advantage of the hardmask film and enables the capacitor to be formed over a low-k dielectric material. Attack of the underlying low-k dielectric material is suppressed during the etching and stripping processes used to form the capacitor, due to the presence of the hardmask. The low-k dielectric film provides for a reduced parasitic capacitance between adjacent conductive wires formed in the low-k dielectric material and therefore provides for increased levels of integration.Type: GrantFiled: June 22, 2001Date of Patent: May 14, 2002Assignees: International Business Machines Corporation, Infineon Technologies North America Corp.Inventors: Timothy J. Dalton, Andrew P. Cowley, Peter A. Emmi, Erdem Kaltalioglu, Vincent J. McGahay
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Publication number: 20010036753Abstract: An on-chip vertically stacked decoupling capacitor includes a hardmask film formed between the capacitor dielectric and the lower electrode. The manufacturing process used to form the capacitor takes advantage of the hardmask film and enables the capacitor to be formed over a low-k dielectric material. Attack of the underlying low-k dielectric material is suppressed during the etching and stripping processes used to form the capacitor, due to the presence of the hardmask. The low-k dielectric film provides for a reduced parasitic capacitance between adjacent conductive wires formed in the low-k dielectric material and therefore provides for increased levels of integration.Type: ApplicationFiled: June 22, 2001Publication date: November 1, 2001Inventors: Timothy J. Dalton, Andrew P. Cowley, Peter A. Emmi, Erdem Kaltalioglu, Vincent J. McGahay
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Patent number: 6278147Abstract: An on-chip vertically stacked decoupling capacitor includes a hardmask film formed between the capacitor dielectric and the lower electrode. The manufacturing process used to form the capacitor takes advantage of the hardmask film and enables the capacitor to be formed over a low-k dielectric material. Attack of the underlying low-k dielectric material is suppressed during the etching and stripping processes used to form the capacitor, due to the presence of the hardmask. The low-k dielectric film provides for a reduced parasitic capacitance between adjacent conductive wires formed in the low-k dielectric material and therefore provides for increased levels of integration.Type: GrantFiled: January 18, 2000Date of Patent: August 21, 2001Assignee: International Business Machines CorporationInventors: Timothy J. Dalton, Andrew P. Cowley, Peter A. Emmi, Erdem Kaltalioglu, Vincent J. McGahay