Abstract: A drive circuit for a MEMS device, an integrated circuit having a plurality of MEMS devices and drivers, a method of operating the drive circuit and a method of manufacturing the integrated circuit. In one embodiment, the drive circuit includes: (1) an electrode driver and (2) a switching network, coupled to an output of said electrode driver that: (a) in a first configuration, couples said output to a first electrode of an axis of said MEMS device and grounds an opposing second electrode of said axis of said MEMS device and (b) in a second configuration, couples said output to said second electrode and grounds said first electrode.

Abstract: A drive circuit for a MEMS device, an integrated circuit having a plurality of MEMS devices and drivers, a method of operating the drive circuit and a method of manufacturing the integrated circuit. In one embodiment, the drive circuit includes: (1) an electrode driver and (2) a switching network, coupled to an output of said electrode driver that: (a) in a first configuration, couples said output to a first electrode of an axis of said MEMS device and grounds an opposing second electrode of said axis of said MEMS device and (b) in a second configuration, couples said output to said second electrode and grounds said first electrode.

Abstract: An electronic solid-state relay having pass transistors and a shunt transistor. The pass transistors are connected between input terminals and connected together at a common node. The shunt transistor is connected between the common node and ground or, if the relay is a differential relay, to a common node connected to pass transistors connected to another set of input terminals. The transistors are controlled by a common control signal, with the change in conductivity of the pass transistors being the inverse of the change in conductivity of the shunt transistor in response to the control signal.