Patents by Inventor Andrew Perlman
Andrew Perlman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110146978Abstract: The present invention relates to an enhanced oil recovery process that is integrated with a synthesis gas generation process, such as gasification or reforming, and an air separation process for generating (i) an oxygen stream for use, for example, in the syngas process or a combustion process, and (ii) a nitrogen stream for EOR use.Type: ApplicationFiled: December 16, 2010Publication date: June 23, 2011Applicant: GREATPOINT ENERGY, INC.Inventor: Andrew Perlman
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Patent number: 7183141Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: GrantFiled: December 30, 2004Date of Patent: February 27, 2007Assignee: Spansion LLCInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 7157750Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: GrantFiled: July 27, 2004Date of Patent: January 2, 2007Assignee: Spansion LLCInventors: Vladimer Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 7145793Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: GrantFiled: June 21, 2004Date of Patent: December 5, 2006Assignee: Spansion, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20050116256Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: ApplicationFiled: July 27, 2004Publication date: June 2, 2005Applicant: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6844608Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: GrantFiled: May 7, 2002Date of Patent: January 18, 2005Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6809955Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: GrantFiled: May 7, 2002Date of Patent: October 26, 2004Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6781868Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: GrantFiled: May 7, 2002Date of Patent: August 24, 2004Assignee: Advanced Micro Devices, Inc.Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Patent number: 6627944Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.Type: GrantFiled: May 7, 2002Date of Patent: September 30, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Aaron Mandell, Andrew Perlman
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Publication number: 20020163829Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20020163030Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Aaron Mandell, Andrew Perlman
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Publication number: 20020163057Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
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Publication number: 20020163830Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.Type: ApplicationFiled: May 7, 2002Publication date: November 7, 2002Applicant: Coatue CorporationInventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman