Patents by Inventor Andrew Perlman

Andrew Perlman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110146978
    Abstract: The present invention relates to an enhanced oil recovery process that is integrated with a synthesis gas generation process, such as gasification or reforming, and an air separation process for generating (i) an oxygen stream for use, for example, in the syngas process or a combustion process, and (ii) a nitrogen stream for EOR use.
    Type: Application
    Filed: December 16, 2010
    Publication date: June 23, 2011
    Applicant: GREATPOINT ENERGY, INC.
    Inventor: Andrew Perlman
  • Patent number: 7183141
    Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: February 27, 2007
    Assignee: Spansion LLC
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 7157750
    Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
    Type: Grant
    Filed: July 27, 2004
    Date of Patent: January 2, 2007
    Assignee: Spansion LLC
    Inventors: Vladimer Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 7145793
    Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
    Type: Grant
    Filed: June 21, 2004
    Date of Patent: December 5, 2006
    Assignee: Spansion, Inc.
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Publication number: 20050116256
    Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
    Type: Application
    Filed: July 27, 2004
    Publication date: June 2, 2005
    Applicant: Advanced Micro Devices, Inc.
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 6844608
    Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: January 18, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 6809955
    Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: October 26, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 6781868
    Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: August 24, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Patent number: 6627944
    Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: September 30, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Aaron Mandell, Andrew Perlman
  • Publication number: 20020163829
    Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 7, 2002
    Applicant: Coatue Corporation
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Publication number: 20020163030
    Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 7, 2002
    Applicant: Coatue Corporation
    Inventors: Aaron Mandell, Andrew Perlman
  • Publication number: 20020163057
    Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 7, 2002
    Applicant: Coatue Corporation
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman
  • Publication number: 20020163830
    Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 7, 2002
    Applicant: Coatue Corporation
    Inventors: Vladimir Bulovic, Aaron Mandell, Andrew Perlman